DPE8M624-120M datasheet, PDF - EEWORLD Datasheet

DPE8M624-120M: DescriptionEEPROM Module, 128KX8, 120ns, Parallel, CMOS,; Categorystorage storage; File Size204KB，6 Pages; ManufacturerTwilight Technology Inc.

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DPE8M624-120M Overview

EEPROM Module, 128KX8, 120ns, Parallel, CMOS,

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Twilight Technology Inc.
package instruction	DIP, DIP40,.6
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	120 ns
Other features	DATA RETENTION = 10 YEARS; AUTOMATIC WRITE
Spare memory width	16
Data polling	YES
Data retention time - minimum	10
JESD-30 code	R-XDMA-T40
memory density	1048576 bit
Memory IC Type	EEPROM MODULE
memory width	8
Number of functions	1
Number of terminals	40
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	128KX8
Package body material	UNSPECIFIED
encapsulated code	DIP
Encapsulate equivalent code	DIP40,.6
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
page size	64 words
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
Maximum standby current	0.0014 A
Maximum slew rate	0.17 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	NO

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