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2SC3295-B

Description
Audio Frequency Amplifier Applications Switching Applications
CategoryDiscrete semiconductor    The transistor   
File Size195KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SC3295-B Overview

Audio Frequency Amplifier Applications Switching Applications

2SC3295-B Parametric

Parameter NameAttribute value
Parts packaging codeSOT-23
package instruction2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN
Contacts3
Reach Compliance Codeunknow
Maximum collector current (IC)0.15 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)1200
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Base Number Matches1
2SC3295
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC3295
Audio Frequency Amplifier Applications
Switching Applications
High h
FE:
h
FE
= 600~3600
High voltage: V
CEO
= 50 V
High collector current: I
C
= 150 mA (max)
Small package
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
50
50
5
150
30
150
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
TO-236MOD
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
SC-59
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-3F1A
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 0.012 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE
(Note)
V
CE (sat)
f
T
C
ob
NF (1)
Noise figure
NF (2)
Test Condition
V
CB
=
50 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
6 V, I
C
=
2 mA
I
C
=
100 mA, I
B
=
10 mA
V
CE
=
10 V, I
C
=
10 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
V
CE
=
6 V, I
C
=
0.1 mA, f
=
100 Hz,
R
g
=
10 kΩ
V
CE
=
6 V, I
C
=
0.1 mA, f
=
1 kHz,
R
g
=
10 kΩ
Min
600
100
Typ.
0.12
250
3.5
0.5
0.3
Max
0.1
0.1
3600
0.25
dB
V
MHz
pF
Unit
μA
μA
Note: h
FE
classification A: 600~1800, B: 1200~3600
Marking
1
2007-11-01
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