UNISONIC TECHNOLOGIES CO.,LTD
2SC3320
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE HIGH SPEED
SWITCHING
FEATURES
* High voltage, high speed switching
* High reliability
1
TO-3P
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SC3320L-x-T3P-T
2SC3320L-x-T3P-T
Package
TO-3P
Pin Assignment
1
2
3
B
C
E
Packing
Tube
2SC3320L-x-T3P-T
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Free
(1) T: Tube
(2) T3P: TO-3P
(3) x: refer to Classification of h
FE1
(4) G: Halogen Free, L: Lead Free
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Copyright © 2011 Unisonic Technologies Co., Ltd
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PARAMETER
Collector Base Voltage
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(
T
C
= 25℃)
SYMBOL
RATINGS
UNIT
V
CBO
500
V
V
CEO
400
V
Collector Emitter Voltage
V
CEO(SUS)
400
V
Emitter Base Voltage
V
EBO
7
V
Collector Current
I
C
15
A
Base Current
I
B
5
A
Power Dissipation
P
D
80
W
℃
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-40 ~ +150
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Case
SYMBOL
θ
JC
RATINGS
1.55
UNIT
℃/W
ELECTRICAL SPECIFICATIONS
(T
C
=25℃, Unless Otherwise Specified.)
PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Switching Time
SYMBOL
V
CBO
V
CEO
V
CEO(SUS)
V
EBO
V
CE (SAT)
V
BE (SAT)
I
CBO
I
EBO
h
FE
t
ON
t
STG
t
F
TEST CONDITIONS
I
CBO
=1mA
I
CEO
=10mA
I
C
=0.2A
I
EBO
=1mA
I
C
=6A, I
B
=1.2A
V
CBO
=500V
V
EBO
=7V
I
C
=6A, V
CE
=5V
I
C
=7.5A, I
B1
=1.5A, I
B2
=-3A
R
L
=20Ω, Pw=20μs, Duty
≤
2%
MIN
500
400
400
7
TYP
MAX
UNIT
V
V
V
V
V
V
mA
mA
μs
μs
μs
10
1
1.5
1
1
45
0.5
1.5
0.15
CLASSIFICATION OF h
FE
RANK
RANGE
A
10~15
B
15~20
C
20~25
D
25~30
E
30~35
F
35~45
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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SWITCHING TIME TEST CIRCUIT
NPN EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
NPN EPITAXIAL SILICON TRANSISTOR
Collector Emitter Voltage, V
CE
(V)
Base and Collector Saturation Voltage
4
3
1
0.5
0.3
V
CE(SAT)
0.1
0.05
0.03
0.01
0.05 0.1
V
BE(SAT)
T
C
=25℃I
C
=5I
B
30
DC Current Gain, h
FE
Safe Operating Area
10
10
5
3
1
0.5
0.3
T
C
=25℃
0.05 Single Pulse
0.03
1
3
5
10
0.1
s
P
W
=1ms
DC
0
10
s
0.3 0.5
1
3
5
10
20
30 50 100
300 500 1000
Collector Current, I
C
(A)
Collector Emitter voltage, V
CE
(V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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