2SC4304
Silicon NPN Triple Diffused Planar Transistor
(High Voltage High Speed Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
900
800
7
3(
Pulse
6)
1.5
35(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Switching Regulator and General Purpose
(Ta=25°C)
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=800V
V
EB
=7V
I
C
=10mA
V
CE
=4V, I
C
=0.7A
I
C
=0.7A, I
B
=0.14A
I
C
=0.7A, I
B
=0.14A
V
CE
=12V, I
E
=–0.3A
V
CB
=10V, f=1MHz
Ratings
100
max
100
max
800
min
10 to 30
0.5
max
1.2
max
15
typ
50
typ
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
Unit
µ
A
V
V
V
MHz
pF
13.0min
16.9
±0.3
8.4
±0.2
µ
A
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
±0.2
2.4
±0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
250
R
L
(Ω)
357
I
C
(A)
0.7
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.1
I
B2
(A)
–0.35
t
on
(
µ
s)
0.7
max
t
stg
(
µ
s)
4.0
max
t
f
(
µ
s)
0.7
max
2.54
3.9
B C E
I
C
– V
C E
Characteristics
(Typical)
3
V
CE
(sat),V
BE
(sat) – I
C
Temperature Characteristics
(Typical)
C ol l e c t o r - E m i tt e r S at u r a t i o n Vol t ag e V
C E( s a t)
(V )
Ba s e - E m i t te r S at u r a t i o n Vo l ta ge V
B E (s at)
( V )
( I
C
/ I
B
= 5 )
I
C
– V
B E
Temperature Characteristics
(Typical)
3
( V
CE
= 4V )
700mA
50 0m A
V
C E
( s at )
2
25˚C (Case Temp)
125˚C (Case Temp)
C o l l e c t o r Cu r r e n t I
C
( A)
300 mA
2
200 mA
C o l l ec t or C u r r e n t I
C
( A )
–55˚C (Case Temp)
2
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Part No.
b. Lot No.
e Te
mp)
p)
Tem
Case
100mA
1
V
B E
( s a t)
)
–55˚C (Case Temp
Temp)
25˚C (Case
125˚C (Case
Temp)
Cas
125
˚C (
0
0
1
2
3
4
0
0.01
0.05
0.1
0.5
1
3
0
0
0.2
0.4
0.6
0. 8
–55˚C
(
I
B
=50m A
25˚C
(
1
1
Case
Temp
)
1.0
1.2
Co ll e ct o r -Em i t t er Vo l tag e V
C E
(V )
Co l le c to r Cu r r en t I
C
( A)
B as e- Em i t t o r Vo l t a g e V
BE
( V )
(V
C E
= 4 V )
50
D C Cu r r e n t Ga i n h
FE
S w i t c hi ng T i m e
t
on•
t
s tg •
t
f
(
µ
s )
12 5˚ C
2 5˚ C
–5 5˚ C
10
7
5
V
CC
2 5 0 V
I
C
:I
B1
: – I
B 2
= 1 0: 1. 5 :5
1
t
f
0 .5
t
on
0 .1
0 .1
t
s tg
Transient Thermal Resistance
θ
j-a
( ˚ C / W )
h
F E
– I
C
Characteristics
(Typical)
t
o n
•t
s tg
•t
f
– I
C
Characteristics
(Typical)
θ
j - a
– t Characteristics
4
1
5
0.5
0.3
2
0.01
0. 0 5
0. 1
0. 5
1
3
0.5
Co l le c to r Cu r r e n t I
C
( A)
1
2
1
10
Time t(ms)
1 00
1000
C ol l ec t or C urr en t I
C
( A)
Safe Operating Area
(Single Pulse)
10
5
50
µ
s
10
0
µ
Reverse Bias Safe Operating Area
10
5
Ma x imu m P ow e r D i s s i p a t i o n P
C
( W )
30
35
Pc – Ta Derating
W
ith
Col lec t o r C u r r e n t I
C
( A )
1
0.5
Co llec t o r C u r r e n t I
C
( A )
1
0.5
s
1m
DC
( Tc
=2
5
C
)
In
s
fin
ite
10
ms
20
he
at
si
nk
0.1
0.05
Without Heatsink
Natural Cooling
0.01
0.1
0 .0 5
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–1.0A
Duty:less than 1%
10
0.01
5
10
50
1 00
5 00
1000
0.005
50
10 0
5 00
1 0 00
2
0
W i t h ou t H ea t s i n k
0
25
50
75
100
12 5
1 50
0.005
2
C ol l e ct or - Em it t e r V ol ta ge V
C E
(V )
Col l ec t or - Em i tt e r Vol t ag e V
C E
( V)
Am bi e nt T e m p e r a t u r e T a ( ˚ C )
101
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