JMnic
Product Specification
Silicon NPN Power Transistors
2SC5100
DESCRIPTION
・With
TO-3PML package
・Complement
to type 2SA1908
APPLICATIONS
・Audio
and general purpose
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
DESCRIPTION
・
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
160
120
6
8
3
75
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
1
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=50mA; I
B
=0
I
C
=3 A;I
B
=0.3 A
V
CB
=160V ;I
E
=0
V
EB
=6V; I
C
=0
I
C
=3A ; V
CE
=4V
I
E
=-0.5A ; V
CE
=12V
I
E
=0; V
CB
=10V;f=1MHz
50
20
MIN
120
2SC5100
TYP.
MAX
UNIT
V
0.5
10
10
180
V
μA
μA
MHz
pF
200
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=4A;R
L
=10Ω
I
B1
=-I
B2
=0.4A
V
CC
=40V
0.13
3.50
0.32
μs
μs
μs
h
FE
classifications
O
50-100
P
70-140
Y
90-180
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC5100
Fig.2 Outline dimensions
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC5100
4