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2SC5198OQ

Description
Power Amplifier Applications
File Size144KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet View All

2SC5198OQ Overview

Power Amplifier Applications

2SC5198
TOSHIBA Transistor
Silicon NPN Triple Diffused Type
2SC5198
Power Amplifier Applications
Unit: mm
High breakdown voltage: V
CEO
= 140 V (min)
Complementary to 2SA1941
Suitable for use in 70-W high fidelity audio amplifier’s output stage
Absolute Maximum Ratings
(T
a
= 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(T
c
= 25°C)
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
140
140
5
10
1
100
150
−55
to 150
Unit
V
V
V
A
A
W
JEDEC
°C
°C
2-16C1A
JEITA
TOSHIBA
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 4.7 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-11-02
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