Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3PML package
・High
breakdown voltage, high reliability
.
・High
speed
APPLICATIONS
・Ultrahigh-definition
CRT display
・Horizontal
deflection output applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
2SC5297
・
Fig.1 simplified outline (TO-3PML) and symbol
Maximum absolute ratings(Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25℃
Collectorl power dissipation
3
Junction temperature
Storage temperature
150
-55~150
W
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
800
6
8
16
60
UNIT
V
V
V
A
A
W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SC5297
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEsat
V
BEsat
V
CEO(SUS)
I
EBO
I
CBO
I
CES
h
FE-1
h
FE-2
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter sustaining voltage
Emitter cut-off current
Collector cut-off current
Collector cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=5A;I
B
=1.25 A
I
C
=5A;I
B
=1.25 A
I
C
=100mA;I
B
=0
V
EB
=4V I
C
=0
V
CB
=800V I
E
=0
V
CE
=1500V; R
BE
=0
I
C
=1 A ; V
CE
=5V
I
C
=5A ; V
CE
=5V
20
4
800
1.0
10
1
30
7
MIN
TYP.
MAX
5
1.5
UNIT
V
V
V
mA
μA
mA
Switching times
t
stg
t
f
Storage time
Fall time
I
C
=4A;R
L
=50Ω
I
B1
=0.8A; I
B2
=-1.6A
V
CC
=200V
3.0
0.1
0.2
μs
μs
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC5297
Fig.2 Outline dimensions
JMnic
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