2SK2782
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L
−π−MOSV)
2
2SK2782
5.2
±
0.2
1.7
±
0.2
Chopper Regulator, DC-DC Converter and Motor Drive
Applications
4-V gate drive
Low drain−source ON-resistance
High forward transfer admittance
Low leakage current
Enhancement mode
: R
DS (ON)
= 0.039
Ω
(typ.)
: |Y
fs
| = 11 S (typ.)
0.95 MAX.
0.6
±
0.15
Unit: mm
6.8 MAX.
0.6 MAX
: I
DSS
= 100
μA
(max) (V
DS
= 60 V)
: V
th
= 0.8 to 2.0 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings
(Ta = 25°C)
2.3
2.3
1.1
±
0.2
12.0 MIN.
5.5
±
0.2
0.6 MAX.
Characteristic
Drain−source voltage
Drain−gate voltage (R
GS
= 20 kΩ)
Gate−source voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
60
60
±20
20
50
40
156
20
4
150
−55
to 150
Unit
V
V
V
A
A
W
mJ
A
mJ
5.2
±
0.2
1
1.
2.
2
3
2.5 MAX.
2
1
GATE
DRAIN
（HEAT
SINK）
3. SOURSE
3
Pulse (Note 1)
JEDEC
JEITA
TOSHIBA
―
SC-64
2-7B5B
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Weight: 0.36 g (typ.)
1.7
±
0.2
6.8 MAX.
°C
°C
0.6 MAX.
5.5
±
0.2
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
1
2.3 2.3
2
3
0.6
±
0.15
0.95 MAX.
0.6
±
0.15
9.6
±
0.3
0.6 MAX.
2.5 MAX.
0.1
±
0.1
1.1
±
0.2
Thermal Characteristics
Characteristic
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch−c)
R
th (ch−a)
Max
3.125
125
Unit
°C / W
°C / W
1.
2.
2.3
2.3
2
1
GATE
DRAIN
（HEAT
SINK）
3. SOURSE
3
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
= 25 V, T
ch
= 25°C (initial), L = 530
μH,
R
G
= 25
Ω,
I
D
= 20 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Handle with care.
JEDEC
JEITA
TOSHIBA
―
―
2-7B7B
Weight: 0.36 g (typ.)
1
2009-12-21
1.5
±
0.2
2SK2782
Electrical Characteristics
(Ta = 25°C)
Characteristic
Gate leakage current
Drain cutoff current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
t
on
t
f
t
off
Q
g
Q
gs
Q
gd
V
DD
≈
48 V, V
GS
= 10 V, I
D
= 20 A
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
Test Condition
V
GS
= ±16 V, V
DS
= 0 V
V
DS
= 60 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
GS
= 4 V, I
D
= 5 A
V
GS
= 10 V, I
D
= 10 A
V
DS
= 10 V, I
D
= 10 A
Min
—
—
60
0.8
—
—
7
—
—
—
—
Typ.
—
—
—
—
0.06
0.039
11
880
90
330
15
Max
±10
100
—
2.0
0.09
0.055
—
—
—
—
—
pF
Unit
μA
μA
V
V
Ω
S
Turn−on time
Switching time
Fall time
—
25
—
ns
—
30
—
Turn−off time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“Miller”) charge
—
—
—
—
100
25
19
6
—
—
—
—
nC
Source−Drain Ratings and Characteristics
(Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
—
—
I
DR
= 20 A, V
GS
= 0 V
I
DR
= 20 A, V
GS
= 0 V, dI
DR
/ dt = 50 A/μs
Min
—
—
—
—
—
Typ.
—
—
—
60
45
Max
20
50
−2.0
—
—
Unit
A
A
V
ns
μC
Marking
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
K2782
Part No.
(or abbreviation code)
Lot No.
Note 4
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
2
2009-12-21
Talking
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