2SK2809-01MR
Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
High voltage
Avalanche-proof
FUJI POWER MOSFET
200509
N-CHANNEL SILICON POWER MOSFET
FAP-IIIB SERIES
Outline Drawings
TO-220F
Applications
Switching regulators
DC-DC converters
General purpose power amplifier
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source peak voltage
Maximum avalanche energy
Maximum power dissipation
Operating and storage
temperature range
Symbol
V
DS
I
D
I
D[puls]
V
GS
E
AV
P
D
T
ch
T
stg
Rating
60
±50
±200
±20
453
50
+150
-55 to +150
Unit
Remarks
V
A
A
V
*1
mJ
W
°C
°C
*1 L=0.241mH, Vcc=24V
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
=1mA
V
GS
=0V
I
D
=1mA
V
DS
=V
GS
V
DS
=60V
V
GS
=0V
V
GS
=20V V
DS
=0V
I
D
=40A V
GS
=10V
I
D
=40A
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=30V R
G
=10
Ω
I
D
=75A
V
GS
=10V
L=100µH
T
ch
=25°C
Min.
60
1.0
T
ch
=25°C
T
ch
=125°C
V
GS
=4V
V
GS
=10V
25
Typ.
1.5
10
0.2
10
12
7.5
55
3500
1250
360
15
75
190
110
1.15
75
0.17
Max.
2.0
500
1.0
100
17
10
5250
1870
540
23
120
285
165
1.65
120
Units
V
V
µA
mA
nA
mΩ
mΩ
S
pF
ns
A
V
ns
µC
50
I
F
=160A V
GS
=0V T
ch
=25°C
I
F
=80A
-di/dt=100A/µs T
ch
=25°C
Thermal characteristics
Item
Thermal resistance
www.fujielectric.co.jp/fdt/scd
Symbol
R
th(ch-c)
R
th(ch-a)
Min.
Typ.
Max.
2.50
62.5
Units
°C/W
°C/W
1
51mcu
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