2SK2961
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
−π−MOSV)
2
2SK2961
Relay Drive, Motor Drive and DC−DC Converter
Application
Unit: mm
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
Enhancement mode
: R
DS (ON)
= 0.2
Ω
(typ.)
: |Y
fs
| = 2.0 S (typ.)
: I
DSS
= 100
μA
(max) (V
DS
= 60 V)
: V
th
= 0.8 to 2.0 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (R
GS
= 20 kΩ)
Gate−source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
T
ch
T
stg
Rating
60
60
±20
2.0
6.0
0.9
150
−55
to 150
Unit
V
V
V
A
W
°C
°C
Pulse (Note 1)
JEDEC
JEITA
TOSHIBA
TO-92MOD
—
2-5J1C
Weight: 0.36 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to ambient
Symbol
R
th (ch−a)
Max
138
Unit
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
2009-09-29
2SK2961
Electrical Characteristics
(Ta = 25°C)
Characteristics
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
Test Condition
V
GS
= ±16 V, V
DS
= 0 V
V
DS
= 60 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
GS
= 4 V, I
D
= 1.0 A
V
GS
= 10 V, I
D
= 1.0 A
V
DS
= 10 V, I
D
= 1.0 A
Min
—
—
60
0.8
—
—
1.0
—
—
—
—
Typ.
—
—
—
—
0.26
0.20
2.0
170
25
75
10
Max
±10
100
—
2.0
0.38
0.27
—
—
—
—
—
pF
Unit
μA
μA
V
V
Ω
S
Turn−on time
Switching time
Fall time
t
on
—
15
—
ns
t
f
—
50
—
Turn−off time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) Charge
t
off
Q
g
Q
gs
Q
gd
V
DD
≈
48 V, V
GS
= 10 V, I
D
= 2 A
—
—
—
—
170
5.8
4.1
1.7
—
—
—
—
nC
Source−Drain Ratings and Characteristics
(Ta = 25°C)
Characteristics
Continuous drain reverse
current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
I
DR
= 2 A, V
GS
= 0 V
I
DR
= 2 A, V
GS
= 0 V, dI
DR
/ dt = 50 A /
μs
Test Condition
—
—
Min
—
—
—
—
—
Typ.
—
—
—
45
40.5
Max
2.0
6.0
−1.5
—
—
Unit
A
A
V
ns
nC
Marking
Note 2: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
K2961
Part No.
(or abbreviation code)
Lot No.
Note 2
2
2009-09-29
京公网安备 11010802033920号
EEWORLD
