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ASJE1200R100SY-EX

Description
Power Field-Effect Transistor, 17A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size249KB,7 Pages
ManufacturerMicross
Websitehttps://www.micross.com
Download Datasheet Parametric View All

ASJE1200R100SY-EX Overview

Power Field-Effect Transistor, 17A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN

ASJE1200R100SY-EX Parametric

Parameter NameAttribute value
MakerMicross
Parts packaging codeTO-257AA
package instructionFLANGE MOUNT, R-XSFM-P3
Contacts3
Reach Compliance Codecompliant
Shell connectionISOLATED
ConfigurationSINGLE
Minimum drain-source breakdown voltage1200 V
Maximum drain current (ID)17 A
Maximum drain-source on-resistance0.1 Ω
FET technologyJUNCTION
JEDEC-95 codeTO-257AA
JESD-30 codeR-XSFM-P3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature200 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)30 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON CARBIDE
ADVANCED INFORMATION
Normally-OFF Trench Silicon
Carbide Power JFET
FEATURES:
Die Inside
• Hermetic TO-257 Packaging
• 200°C Maximum Operating Temperature (for 260
o
C Contact Factory)
• Available Screening:
- MIL-PRF-19500 Equivalent
- Space Level
- MIL-STD-750 Methods & Conditions
• Inherent Radiation Tolerance >100K TID
• Compatible with Standard Gate Driver ICs
• Positive Temperature Coefficient for Ease of Paralleling
• Extremely Fast Switching with No “Tail”
4
Current at 150°C
• 1200 Volt Drain-Source Blocking Voltage
• RDS
(on)max
of 0.100
Ω
• Voltage Controlled
• Low Gate Charge
• Low Intrinsic Capacitance
SiC JFET
ASJE1200R100
V
μJ
Product Summary
BV
DS
1200
RDS
(ON)max
E
TS,typ
0.100
170
D (2,4)
G (1)
APPLICATIONS:
• Satellite Solar Inverters
• Mil Spec Power Supplies
- Switch Mode
- Uninterrupted
• Jet Engine Electronics
• Down-hole Electronics (Motor / Compressor Control)
TO-257
123
S (3)
Internal Schematic
Non-isolated tab version shown.
For isolated tab version, tab (4)
is No Connect.
MAXIMUM RATINGS
Parameter
Continuous Drain Current
Pulsed Drain Current
(1)
Short Circuit Withstand Time
Power Dissipation
Gate Source Voltage
Operating and Storage Temperature
Symbol
I
D, Tj=125
I
D, Tj=175
I
DM
t
SC
P
D
V
GS
T
j
, T
j,stg
Conditions
T
j
= 125 °C
T
j
= 175 °C
T
c
= 25 °C
V
DD
< 800 V, T
C
< 125 °C
T
c
= 25 °C
AC
(2)
Value
17
12
30
50
136
15 to +15
55 to +200*
260
Unit
A
A
μS
W
V
o
o
C
C
T
sold
Lead Temperature for Soldering
1/8" from case < 10 s
(1) Limited by pulse width
(2) Rg
EXT
= 1 ohm, t
p
< 200ns, see Figure 5 for static conditions
* Contact Factory for 260
o
C
THERMAL CHARACTERISTICS
Value
Parameter
Thermal Resistance, junction to case
Thermal Resistance, junction to ambient
ASJE1200R100
Rev. 0.0 12/10
Symbol
R
th,JC
R
th,JA
Typ
Max
TBD
TBD
Unit
°C / W
For more products and
information, please visit our
website at www.micross.com
Micross Components reserves the right to change products or specifications without notice.
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