2SK3568
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3568
Switching Regulator Applications
•
•
•
•
Low drain-source ON-resistance: R
DS (ON)
= 0.4
Ω
(typ.)
High forward transfer admittance: |Y
fs
| = 8.5 S (typ.)
Low leakage current: I
DSS
= 100
μA
(V
DS
= 500 V)
Enhancement mode: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kΩ)
Gate-source voltage
DC
Drain current
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
500
500
±30
12
48
40
364
12
4
150
-55 to 150
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
Unit
V
V
V
Pulse (t
=
1 ms)
(Note 1)
Drain power dissipation (Tc
=
25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
―
SC-67
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
3.125
62.5
Unit
°C/W
°C/W
1
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: V
DD
=
90 V, T
ch
=
25°C (initial), L
=
4.3 mH, I
AR
=
12 A, R
G
=
25
Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
3
1
2009-09-29
2SK3568
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
t
f
t
off
Q
g
Q
gs
Q
gd
V
DD
≈
400 V, V
GS
=
10 V, I
D
=
12 A
Duty
≤
1%, t
w
=
10
μs
Symbol
I
GSS
V
(BR) GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
⎪Y
fs
⎪
C
iss
C
rss
C
oss
t
r
t
on
10 V
V
GS
0V
50
Ω
I
D
=
6 A
V
OUT
V
DS
=
25 V, V
GS
=
0 V, f
=
1 MHz
Test Condition
V
GS
= ±25
V, V
DS
=
0 V
I
G
= ±10 μA,
V
DS
=
0 V
V
DS
=
500 V, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
0 V
V
DS
=
10 V, I
D
=
1 mA
V
GS
=
10 V, I
D
=
6 A
V
DS
=
10 V, I
D
=
6 A
Min
⎯
±30
⎯
500
2.0
⎯
3.5
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
0.4
8.5
1500
15
180
22
50
36
170
42
23
19
Max
±10
⎯
100
⎯
4.0
0.52
⎯
⎯
⎯
pF
Unit
μA
V
μA
V
V
Ω
S
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
ns
R
L
=
33
Ω
V
DD
≈
200 V
⎯
⎯
⎯
⎯
⎯
nC
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
⎯
⎯
I
DR
=
12 A, V
GS
=
0 V
I
DR
=
12 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/μs
Min
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
1200
16
Max
12
48
−1.7
⎯
⎯
Unit
A
A
V
ns
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
K3568
Part No. (or abbreviation code)
Please contact your TOSHIBA sales representative for details as to
Lot No.
Note 4
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2009-09-29
2SK3568
I
D
– V
DS
12
10,15
6
5.2
24
5
10,15
8
I
D
– V
DS
COMMON SOURCE
Tc
=
25°C
PULSE TEST
5.5
16
5.2
5
4.75
4.5
4
VGS
=
4 V
(A)
DRAIN CURRENT I
D
8
4.75
6
DRAIN CURRENT I
D
COMMON SOURCE
Tc
=
25°C
PULSE TEST
(A)
10
20
12
4
4.5
8
2
4.25
VGS
=
4V
0
0
2
4
6
8
10
12
0
0
10
20
30
40
50
60
DRAIN-SOURCE VOLTAGE
V
DS
(V)
DRAIN-SOURCE VOLTAGE
V
DS
(V)
I
D
– V
GS
V
DS
(V)
24
COMMON SOURCE
12
V
DS
– V
GS
COMMON SOURCE
10
Tc
=
25℃
PULSE TEST
(A)
20
VDS
=
20 V
PULSE TEST
DRAIN CURRENT I
D
16
DRAIN-SOURCE VOLTAGE
8
ID
=
12 A
12
6
8
100
4
25
0
0
2
4
6
8
10
12
Tc
= −55°C
4
6
2
3
0
0
4
8
12
16
20
24
GATE-SOURCE VOLTAGE
V
GS
(V)
GATE-SOURCE VOLTAGE
V
GS
(V)
⎪Y
fs
⎪
– I
D
FORWARD TRANSFER ADMITTANCE
⎪Y
fs
⎪
(S)
100
10
R
DS (ON)
– I
D
DRAIN-SOURCE ON-RESISTANCE
R
DS (ON)
(Ω)
COMMON SOURCE
Tc
=
25°C
PULSE TEST
Tc
= −55°C
10
100
25
1
VGS
=
10 V½15V
1
COMMON SOURCE
VDS
=
20 V
0.1
0.1
PULSE TEST
1
10
100
0.1
0.1
1
10
100
DRAIN CURRENT I
D
(A)
DRAIN CURRENT I
D
(A)
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2009-09-29
2SK3568
R
DS (ON)
– Tc
2.5
100
COMMON SOURCE
2.0
COMMON SOURCE
I
DR
– V
DS
Tc
=
25°C
PULSE TEST
10
DRAIN-SOURCE ON RESISTANCE
R
DS (ON)
(Ω)
1.5
ID
=
12A
6
3
1.0
VGS
=
10 V
0.5
DRAIN REVERSE CURRENT
I
DR
(A)
PULSE TEST
1
10
5
3
1
VGS
=
0,
−1
V
−0.6
−0.8
−1.0
−1.2
0
−80
−40
0
40
80
120
160
0.1
0
−0.2
−0.4
CASE TEMPERATURE
Tc
(°C)
DRAIN-SOURCE VOLTAGE
V
DS
(V)
CAPACITANCE – V
DS
10000
Ciss
5
V
th
– Tc
GATE THRESHOLD VOLTAGE
V
th
(V)
(pF)
4
1000
Coss
100
C
3
CAPACITANCE
2
COMMON SOURCE
1
VDS
=
10 V
ID
=
1 mA
PULSE TEST
0
−80
−40
0
40
80
120
160
Crss
10 COMMON SOURCE
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
1
0.1
1
10
100
DRAIN-SOURCE VOLTAGE
V
DS
(V)
CASE TEMPERATURE
Tc
(°C)
P
D
– Tc
V
DS
(V)
50
500
VDS
400
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
(V)
GATE-SOURCE VOLTAGE
V
GS
20
DRAIN POWER DISSIPATION
P
D
(W)
40
16
30
DRAIN-SOURCE VOLTAGE
300
VDD
=
100 V
200
200
VGS
400
12
20
Common source
ID
=
12 A
Tc
=
25°C
Pulse test
8
10
100
4
0
0
40
80
120
160
0
0
10
20
30
40
50
0
60
CASE TEMPERATURE
Tc
(°C)
TOTAL GATE CHARGE
Q
g
(nC)
4
2009-09-29
2SK3568
r
th
– t
w
NORMALIZED TRANSIENT THERMAL
IMPEDANCE r
th (t)
/R
th (ch-c)
10
1
Duty=0.5
0.2
0.1
0.1
0.05
0.02
PDM
SINGLE PULSE
t
T
Duty
=
t/T
Rth (ch-c)
=
3.125°C/W
0.01 0.01
0.001
10
μ
100
μ
1m
10m
100m
1
10
PULSE WIDTH
t
w
(s)
SAFE OPERATING AREA
100
ID max (PULSED)
*
100
μs
*
ID max (CONTINUOUS)
*
400
500
E
AS
– T
ch
10
1 ms
*
AVALANCHE ENERGY
E
AS
(mJ)
(A)
300
DRAIN CURRENT I
D
200
1
DC OPERATION
Tc
=
25°C
100
*
SINGLE NONREPETITIVE PULSE
Tc = 25
°C
CURVES
LINEARLY
MUST
WITH
BE
DERATED
IN
0
25
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL)
T
ch
(°C)
VDSS max
INCREASE
0.01
TEMPERATURE.
1
10
100
1000
15 V
−15
V
B
VDSS
I
AR
V
DD
V
DS
DRAIN-SOURCE VOLTAGE
V
DS
(V)
TEST CIRCUIT
R
G
=
25
Ω
V
DD
=
90 V, L
=
4.3mH
WAVE FORM
Ε
AS
=
⎛
⎞
1
B VDSS
⎟
⋅
L
⋅
I2
⋅ ⎜
⎜
B
⎟
2
⎝
VDSS
−
VDD
⎠
5
2009-09-29
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