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FT6168-25DM

Description
Standard SRAM, 4KX4, 25ns, CMOS, CDIP20, 0.300 INCH, CERAMIC, DIP-20
Categorystorage    storage   
File Size536KB,16 Pages
ManufacturerForce Technologies Ltd.
Download Datasheet Parametric View All

FT6168-25DM Overview

Standard SRAM, 4KX4, 25ns, CMOS, CDIP20, 0.300 INCH, CERAMIC, DIP-20

FT6168-25DM Parametric

Parameter NameAttribute value
MakerForce Technologies Ltd.
Parts packaging codeDIP
package instructionDIP,
Contacts20
Reach Compliance Codecompliant
ECCN code3A001.A.2.C
Maximum access time25 ns
Other featuresLG_MAX
JESD-30 codeR-CDIP-T20
length26.924 mm
memory density16384 bit
Memory IC TypeSTANDARD SRAM
memory width4
Number of functions1
Number of terminals20
word count4096 words
character code4000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize4KX4
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height5.08 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
width7.62 mm
FT6168, FT6169, FT6170
FEATURES
Full CMOS, 6T Cell
High Speed (Equal Access and Cycle Times)
– 12/15/20/25/35ns (Commercial)
– 20/25/35/45/55/70ns (FT6168 Military)
Low Power Operation (Commercial)
– 715 mW Active
– 193 mW Standby (TTL Input)
FT6168
– 83 mW Standby (CMOS Input)
FT6168
Single 5V±10% Power Supply
ULTRA HIGH SPEED 4K x 4
STATIC CMOS RAMS
Fully TTL Compatible, Common I/O Ports
Three Options
FT6168
Low Power Standby Mode
FT6169
Fast Chip Select Control
FT6170
Fast Chip Select, Output Enable
Controls
Standard Pinout (JEDEC Approved)
FT6168:
20-pin DIP, SOJ, LCC, SOIC,
CERPACK, and Flat Pack
FT6169:
20-pin DIP and SOIC
FT6170:
22-pin DIP
DESCRIPTION
The
FT6168, FT6169
and
FT6170
are a family of
16,384-bit ultra high-speed static RAMs organised as 4K
x 4. All three devices have common input/output ports.The
FT6168
enters the standby mode when the chip enable
(CE) control goes HIGH; with CMOS input levels, power
consumption is only 83mW in this mode. Both the
FT6169
and the
FT6170
offer a fast chip select access time that
is only 67% of the address access time. In addition, the
FT6170
includes an output enable (OE) control to elimi-
nate data bus contention. The RAMs operate from a
single 5V ± 10% tolerance power supply.
Access times as fast as 12 nanoseconds are available,
permitting greatly enhanced system operating speeds.
CMOS is used to reduce power consumption to a low 715
mW active, 193 mW standby.
The
FT6168
and
FT6169
are available in 20-pin (FT6170
in 22-pin) 300 mil DIP packages providing excellent
board level densities. The
FT6168
is also available in 20-
pin 300 mil SOIC, SOJ, CERPACK, and Flat Pack
packages.
The
FT6169
is also available in a 20-pin 300 mil SOIC
package.
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATIONS
FT6168
FT6169
DIP (P2, C6, D2)
DIP (P2)
SOIC (S2)
SOIC (S2)
SOJ (J2)
CERPACK (F2)
SOLDER SEAL FLAT PACK (FS-2)
FT6170
DIP (P3)
FT6168
CE USED ON FT6168 ALSO FOR POWER DOWN FUNCTIONS
CE USED ON FT6169 FAST CHIP SELECT
OE OUTPUT ENABLE FUNCTION ON FT6170
1997
1/16
Rev A
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