FHD16 datasheet, PDF - EEWORLD Datasheet

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FHD16: DescriptionRectifier Diode, 1 Element, 0.2A, Silicon,; CategoryDiscrete semiconductor diode; File Size106KB，1 Pages; ManufacturerFenghua (HK) Electronics Ltd.

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FHD16 Overview

Rectifier Diode, 1 Element, 0.2A, Silicon,

FHD16 Parametric

Parameter Name	Attribute value
Maker	Fenghua (HK) Electronics Ltd.
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.25 V
JESD-30 code	R-PDSO-G3
Maximum non-repetitive peak forward current	0.5 A
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Maximum output current	0.2 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum power dissipation	0.225 W
Certification status	Not Qualified
Maximum reverse recovery time	0.006 µs
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL

FHD16 Preview

Switching Diode

DESCRIPTION & FEATURES

概述及特點

Low forward voltage

½正向壓降

Fast reverse recovery time

快恢復時間

Ultra High Speed Switching Application

超高速開關應用

SOT-23

FHD16

PIN ASSIGNMENT

引腳說明

PIN NAME

FUNCTION

PIN NUMBER

引腳序號

管腳符號

功½

SOT-23

3

Cathode

A

1

Anode

－

NC

2

C

3

Cathode

MAXIMUM RATINGS(T

a

=25℃)

最大額定值

CHARACTERISTIC

特性參數

Symbol

符號

Rating

額定值

Continuous Reverse Voltage

連續反向電壓

75

V

R

Peak Forward Current

正向峰值電流

I

F

200

Peak Forward Surge Current

正向最大浪湧電流

500

I

FM(surge)

THERMAL CHARACTERISTICS

熱特性

CHARACTERISTIC

特性參數

Symbol

符號

Max

最大值

Total Device Dissipation FR-5 Board(1) T

A

=25℃

225

P

D

Total Device Dissipation Alumina Substrate,(2) T

A

=25℃

P

D

300

½耗散功率氧化鋁襯底

150，

T

J

,

Junction and Storage Temperature結溫和儲存溫度

T

stg

-55 ~150

1. FR-5=1.0×0.75×0.062in, printed-circuit board.

2. Alumina=0.4×0.3×0.024in, 99.5%alumina

DEVICE MARKING

打標

FHD16=A6

ELECTRICAL CHARACTERISTICS

電特性

(T

A

=25℃ unless otherwise noted

如無特殊說明，溫度為

25℃)

Symbol

Test Condition

Characteristic

特性參數

符號

測試條件

V

R

=75Vdc

Reverse Voltage Leakage Current

V

R

=75Vdc,T

j

=150℃

I

R

反向漏電流

V

R

=25Vdc,T

j

=150℃

Reverse Breakdown Voltage

I

BR

=100μAdc

V

(BR)

反向擊穿電壓

I

F

=1mAdc

I

F

=10mAdc

Forward Voltage

正向電壓

V

F

I

F

=50mAdc

I

F

=150mAdc

Diode Capacitance

電容

V

R

=0,f=1.0MHz

C

D

Forward Recovery Voltage

V

FR

I

F

=10mAdc,t

r

=20ns

正向恢復電壓

Reverse Recovery Time

I

F

=I

R

=10mAdc,

t

rr

反向恢復時間

R

L

=50Ω

1

Anode

Unit

單½

Vdc

mAdc

Unit

單½

mW

℃

Min

最小值

—

75

—

Type

典型值

—

Max

最大值

1.0

50

30

—

715

855

1000

1250

2.0

1.75

6.0

Unit

單½

µA

Vdc

mV

pF

Vdc

nS

1

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