FHD1664 datasheet, PDF - EEWORLD Datasheet

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FHD1664: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size87KB，1 Pages; ManufacturerFenghua (HK) Electronics Ltd.

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FHD1664 Overview

Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN

FHD1664 Parametric

Parameter Name	Attribute value
Maker	Fenghua (HK) Electronics Ltd.
Parts packaging code	SOT-89
package instruction	SMALL OUTLINE, R-PSSO-F3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	32 V
Configuration	SINGLE
Minimum DC current gain (hFE)	82
JESD-30 code	R-PSSO-F3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	SINGLE
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz

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NPN

Medium Power Transistor(NPN)

DESCRIPTION & FEATURES

概述及特點

1) Low

V

CE (sat)

= 0.15V(Typ)

(I

C

/

I

B

=500mA/50mA)

2) Complements the FHB1132

3) Epitaxial planar type,

NPN silicon transistor

PIN ASSIGNMENT

引腳說明

PIN NAME

PIN NUMBER

引腳序號

管腳符號

SOT-89

B

1

C

2

E

3

NPN

FHD1664

SOT-89

FUNCTION

功½

BASE

COLLECTOR

EMITTER

MAXIMUM RATINGS(T

a

=25℃)

最大額定值

CHARACTERISTIC

特性參數

Collector-Emitter Voltage

集電極-發射極電壓

Collector-Base Voltage

集電極-基極電壓

Emitter-Base Voltage

發射極-基極電壓

Collector Current(DC)集電極電流-直流

Collector Current(Pulse)集電極電流-脈衝

THERMAL CHARACTERISTICS

熱特性

CHARACTERISTIC

特性參數

Collector Power Dissipation

集電極耗散功率

Junction and Storage Temperature結溫和儲存溫度

Symbol

符號

V

CEO

V

CBO

V

EBO

I

C

I

CP

Symbol

符號

P

c

T

J

T

stg

Rating

額定值

32

40

5.0

1

2

Max

最大值

500

150，

-55 ~150

Unit

單½

Vdc

Adc

Unit

單½

mW

℃

DEVICE MARKING

打標

FHD1664P=DAP (82~180)，FHD1664Q=DAQ (120~270)，FHD1664R=DAR (180~390)

ELECTRICAL CHARACTERISTICS

電特性

(T

A

=25℃ unless otherwise noted

如無特殊說明，溫度為

25℃)

Symbol

Test Condition

Min

Type

Max

Characteristic

特性參數

符號

測試條件

最小值典型值最大值

Collector-Emitter Breakdown Voltage

集電極-發射極擊穿電壓

Collector-Base Breakdown Voltage

集電極-基極擊穿電壓

Emitter-Base Breakdown Voltage

發射極-基極擊穿電壓

Collector Cutoff Current

集電極截止電流

Emitter Cutoff Current

發射極截止電流

DC Current Gain

直流電流增益

Collector-Emitter Saturation

Voltage

集電極-發射極½和壓降

Transition Frequency

特徵頻率

Collect Output Capacitance

輸出電容

Unit

單½

V

nA

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

I

EBO

h

FE

I

C

=1.0mA

I

C

=50µA

I

E

=50µA

V

CB

=20V

V

EB

=4V

V

CE

=3V,I

C

=100mA

32

40

5.0

—

82

—

0.15

150

15

—

500

390

0.4

—

V

CE

（

sat

）

I

C

=500mA,I

B

=50mA

f

T

C

Ob

V

CE

=5V,I

E

=50mA,

f = 100 MHz

V

CB

=10V,I

E

=0,f=1MHZ

V

MH

Z

pF

1

FHD1664 Related Products

	FHD1664	FHD1664P	FHD1664R	FHD1664Q
Description	Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN
Maker	Fenghua (HK) Electronics Ltd.	Fenghua (HK) Electronics Ltd.	Fenghua (HK) Electronics Ltd.	Fenghua (HK) Electronics Ltd.
Parts packaging code	SOT-89	SOT-89	SOT-89	SOT-89
package instruction	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3
Contacts	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A	1 A	1 A
Collector-emitter maximum voltage	32 V	32 V	32 V	32 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	82	82	180	120
JESD-30 code	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	FLAT	FLAT	FLAT	FLAT
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz	150 MHz	150 MHz
Maximum power dissipation(Abs)	-	0.5 W	0.5 W	0.5 W

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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