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ACE634

Description
20V Complementary Enhancement Mode Field Effect Transistor
File Size705KB,9 Pages
ManufacturerACE [ACE Technology Co., Ltd.]
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ACE634 Overview

20V Complementary Enhancement Mode Field Effect Transistor

ACE634
20V Complementary Enhancement Mode Field Effect Transistor
Description
The ACE634 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low R
DS(ON)
. This device is ideal for load switch and battery protection applications.
Features
N-Channel
V
DS
(V)=20V
I
D
=4A
R
DS(ON)
<35mΩ (V
GS
=4.5V)
<42mΩ (V
GS
=2.5V)
P-Channel
V
DS
(V)=-20V
I
D
=-2.5A
R
DS(ON)
<85mΩ (V
GS
=-4.5V)
<115mΩ (V
GS
=-2.5V)
Absolute Maximum Ratings
(T
A
=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
=150℃) T
A
=25℃
*AC
T
A
=70℃
Drain Current (pulse) * B
Power Dissipation
T
A
=25℃
T
A
=70℃
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
T
J
T
STG
Typical
N-Channel P-Channel
20
±12
4
3.2
13
1.1
0.7
-20
±12
-2.5
-2
-13
1.1
0.7
Unit
V
V
A
A
W
O
O
Operating Junction Temperature
Storage Temperature Range
-55 to 150
-55 to 150
C
C
VER 1.2
1
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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