BLP10H605
Broadband LDMOS driver transistor
Rev. 3 — 2 October 2014
Product data sheet
1. Product profile
1.1 General description
A 5 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at
frequencies from HF to 1400 MHz.
Table 1.
Application performance
f
(MHz)
CW
860
V
DS
(V)
50
P
L
(W)
5
G
p
(dB)
22.4
D
(%)
59.6
Test signal
1.2 Features and benefits
Easy power control
Integrated dual side ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 1400 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
NXP Semiconductors
BLP10H605
Broadband LDMOS driver transistor
2. Pinning information
Table 2.
Pin
1, 3, 4, 6, 7, 9, 10, 12
2
5
8
11
13
Pinning
Description
n.c.
gate1
gate2
drain2
drain1
source
[1]
Simplified outline
Graphic symbol
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLP10H605
Description
Version
SOT1352-1
HVSON12 plastic thermal enhanced very thin small outline
package; no leads; 12 terminals; body 5
6
0.85 mm
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
6
65
-
Max
104
+11
+150
150
Unit
V
V
C
C
BLP10H605
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 2 October 2014
2 of 11
NXP Semiconductors
BLP10H605
Broadband LDMOS driver transistor
5. Recommended operating conditions
See application note
AN11520
for more details.
Fig 1.
Recommended operating area; case temperature as a function of power
dissipation
6. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
[1]
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 5 W
[1]
Typ
5.5
Unit
K/W
R
th(j-c)
is measured under RF conditions
7. Characteristics
Table 6.
DC characteristics
T
j
= 25
C; unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
R
DS(on)
Conditions
V
GS
= 0 V; I
D
= 0.06 mA
Min
104
1.25
1.35
-
-
-
-
Typ
-
1.7
1.78
-
0.95
-
4580
Max
-
2.25
2.25
1.4
-
140
-
Unit
V
V
V
A
A
nA
m
gate-source threshold voltage V
DS
= 10 V; I
D
= 6 mA
gate-source quiescent voltage V
DS
= 50 V; I
D
= 30 mA
drain leakage current
drain cut-off current
gate leakage current
drain-source on-state
resistance
V
GS
= 0 V; V
DS
= 50 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 210 mA
BLP10H605
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 2 October 2014
3 of 11
NXP Semiconductors
BLP10H605
Broadband LDMOS driver transistor
Table 7.
AC characteristics
T
j
= 25
C; unless otherwise specified.
Symbol Parameter
C
rs
C
iss
C
oss
feedback capacitance
input capacitance
output capacitance
Conditions
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz
V
GS
= 0 V; V
DS
= 0 V; f = 1 MHz
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz
Min Typ
-
-
-
0.07
6.8
2.24
Max Unit
-
-
-
pF
pF
pF
Table 8.
RF characteristics
Test signal: CW pulsed; t
p
= 50
s;
= 10 %; f = 860 MHz; RF performance at V
DS
= 50 V;
I
Dq
= 30 mA; T
case
= 25
C; unless otherwise specified, in a class-AB production test circuit
[1]
.
Symbol
G
p
D
[1]
Parameter
power gain
drain efficiency
Conditions
P
L
= 5 W
P
L
= 5 W
Min
20.2
57
Typ
22.4
59.6
Max
27.4
-
Unit
dB
%
The industrial test method is performed on special hardware to accommodate the requirements of
production. The test results in this table are correlated to correspond with a performance in the application.
8. Test information
8.1 Ruggedness in class-AB operation
The BLP10H605 is capable of withstanding a load mismatch corresponding to
VSWR = 35 : 1 through all phases under the following conditions: V
DS
= 50 V;
I
Dq
= 30 mA; P
L
= 5 W; f = 860 MHz.
8.2 Test circuit
Printed-Circuit Board (PCB): Rogers RO4350;
r
= 3.48; height = 0.762 mm; thickness copper
plating = 35
m.
See
Table 9
for a list of components.
Fig 2.
Component layout
BLP10H605
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 2 October 2014
4 of 11
NXP Semiconductors
BLP10H605
Broadband LDMOS driver transistor
Table 9.
List of components
See
Figure 2
for component layout.
Component Description
C1, C4, C7
C2
C3
C5
C6
C8
C9
L1
R1
R2
Q1
[1]
Value
100 pF
8.2 pF
5.1 pF
1
F,
25 V
2.2 pF
1
F,
50 V
220
F,
63 V
0
10
-
[1]
[1]
[1]
[1]
Remarks
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SMD 0805
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BLP10H605
American Technical Ceramics type 100A or capacitor of same quality.
8.3 Graphical data
V
DS
= 50 V; I
Dq
= 30 mA; f = 860 MHz.
V
DS
= 50 V; I
Dq
= 30 mA; f = 860 MHz.
(1) P
L(1dB)
= 37.55 dBm (5.7 W)
(2) P
L(3dB)
= 38.24 dBm (6.7 W)
Fig 3.
Power gain and drain efficiency as function of
output power; typical values
Fig 4.
Output power as a function of input power;
typical values
BLP10H605
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 2 October 2014
5 of 11
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