BLP8G10S-45P;
BLP8G10S-45PG
Power LDMOS transistor
Rev. 1 — 25 July 2013
Product data sheet
1. Product profile
1.1 General description
The BLP8G10S-45P and BLP8G10S-45PG are dual path, 45 W LDMOS power
transistors for base station applications at frequencies from 700 MHz to 1000 MHz.
Table 1.
Application performance
Typical RF performance at T
case
= 25
C; I
Dq
= 224 mA in common source class-AB production
circuit.
Test signal
2-carrier W-CDMA
[1]
f
(MHz)
960
V
DS
(V)
28
P
L(AV)
(W)
2.5
G
p
(dB)
20.8
D
(%)
19.8
ACPR
(dBc)
49
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01% probability on CCDF;
carrier spacing = 5 MHz; per section unless otherwise specified.
1.2 Features and benefits
High efficiency
Excellent ruggedness
Designed for broadband operation (700 MHz to 1000 MHz)
Excellent thermal stability
High power gain
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
W-CDMA
LTE
GSM
NXP Semiconductors
BLP8G10S-45P; BLP8G10S-45PG
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain 1
drain 2
gate 2
gate 1
source
[1]
Simplified outline
Graphic symbol
BLP8G10S-45P (SOT1223-1)
BLP8G10S-45PG (SOT1224-1)
1
2
3
4
5
drain 1
drain 2
gate 2
gate 1
source
[1]
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLP8G10S-45P
BLP8G10S-45PG HSOP4
Description
plastic, heatsink small outline package; 4 leads
Version
SOT1223-1
SOT1224-1
HSOP4F plastic, heatsink small outline package; 4 leads (flat)
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
T
case
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
case temperature
[1]
[1]
Min
-
0.5
65
-
-
Max
65
+13
+150
225
150
Unit
V
V
C
C
C
Continuous use at maximum temperature will affect the reliability.
BLP8G10S-45P_8G10S-45PG
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 25 July 2013
2 of 13
NXP Semiconductors
BLP8G10S-45P; BLP8G10S-45PG
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Values specified for entire device.
Symbol
Parameter
Conditions
T
case
= 85
C;
P
L
= 5 W
Typ
Unit
R
th(j-case)
thermal resistance from junction to case
0.85 K/W
6. Characteristics
Table 6.
DC characteristics
T
case
= 25
C; per section unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
GS
= 0 V; I
D
= 0.4 mA
V
DS
= 10 V; I
D
= 40 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 2 A
Min
65
1.5
-
-
-
-
-
Typ
-
1.9
-
7.3
-
3.0
500
Max
-
2.3
1.4
-
140
-
-
Unit
V
V
A
A
nA
S
m
drain-source on-state resistance V
DS
= 10 V; I
D
= 1.4 A
V
GS
= V
GS(th)
+ 3.75 V
Table 7.
RF characteristics
Test signal: 2-carrier W-CDMA; PAR 8.4 dB at 0.01 % probability on CCDF; 3GPP test model 1;
1-64 DPCH; f
1
= 952.5 MHz; f
2
= 957.5 MHz; RF performance at V
DS
= 28 V; I
Dq
= 224 mA;
T
case
= 25
C; per section in a class-AB production circuit unless otherwise specified.
Symbol
G
p
RL
in
D
ACPR
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio
Conditions
P
L
= 2.5 W
P
L
= 2.5 W
P
L
= 2.5 W
P
L
= 2.5 W
Min
20
-
18
-
Typ
20.8
18
19.8
49
Max
-
9
-
43
Unit
dB
dB
%
dBc
7. Test information
7.1 Ruggedness in class-AB operation
The BLP8G10S-45P and BLP8G10S-45PG are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
DS
= 28 V; I
Dq
= 224 mA; P
L
= 25 W; f = 728 MHz.
BLP8G10S-45P_8G10S-45PG
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 25 July 2013
3 of 13
NXP Semiconductors
BLP8G10S-45P; BLP8G10S-45PG
Power LDMOS transistor
7.2 Impedance information
Table 8.
Typical impedance BLP8G10S-45P
Measured load-pull data. Typical values per section unless otherwise specified.
f
(MHz)
BLP8G10S-45P
720
746
757
791
820
869
894
925
942
960
BLP8G10S-45PG
720
746
757
791
869
881
894
925
942
961
[1]
[2]
Z
S
[1]
()
11.6
j12.9
14.8
j9.2
15.3
j4.6
13.3
j1.6
6.5
j1.1
5.2
j2.4
4.4
j3.0
3.8
j3.9
3.6
j4.2
3.6
j4.7
13.2
j7.7
11.8
j4.6
10.4
j3.7
9.8
j2.5
5.0
j4.0
4.6
j4.2
4.2
j4.7
3.8
j5.6
3.7
j5.8
3.6
j6.4
Z
S
and Z
L
defined in
Figure 1.
Z
L
is selected for maximum efficiency.
Z
L
[1][2]
()
5.44 + j6.34
4.51 + j6.03
4.23 + j6.15
3.99 + j5.62
3.87 + j5.37
4.25 + j4.49
3.69 + j4.89
3.49 + j4.72
3.06 + j4.46
3.29 + j4.04
4.34 + j5.10
4.58 + j4.94
4.50 + j5.34
4.19 + j4.87
4.27 + j3.42
3.62 + j3.45
3.77 + j3.29
3.60 + j3.15
3.29 + j2.89
3.36 + j2.47
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
BLP8G10S-45P_8G10S-45PG
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 25 July 2013
4 of 13
NXP Semiconductors
BLP8G10S-45P; BLP8G10S-45PG
Power LDMOS transistor
7.3 Test circuit
See
Table 9
for a list of components.
Fig 2.
Component layout for class-AB production test circuit
Table 9.
List of components
For test circuit see
Figure 2.
Component
C11, C21, C32, C42
C12, C22, C33, C43
C13, C23, C34, C44
C14, C24, C36, C46
C31, C41
C35, C45
R11, R21
S1
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
multilayer ceramic chip capacitor
chip resistor
socket
Value
10
F,
50 V
1
F,
50 V
43 pF
43 pF
220
F,
63 V
3.3 pF
10
-
ATC100B
Multi Comp SMD 1206
Johnstech
ATC100B
ATC100A
Remarks
BLP8G10S-45P_8G10S-45PG
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 25 July 2013
5 of 13
京公网安备 11010802033920号
EEWORLD
