EB13C3E1H-27.000M TR
Series
RoHS Compliant (Pb-free) Low Current 3.3V 4 Pad
5mm x 7mm Ceramic SMD LVCMOS Oscillator
Frequency Tolerance/Stability
±25ppm over 0°C to +70°C
Duty Cycle
50 ±10(%)
RoHS
Pb
Packaging Options
Tape & Reel
EB13C3 E 1 H -27.000M TR
Nominal Frequency
27.000MHz
Logic Control / Additional Output
Tri-State (High Impedance)
ELECTRICAL SPECIFICATIONS
Nominal Frequency
Frequency Tolerance/Stability
27.000MHz
±25ppm over 0°C to +70°C (Inclusive of all conditions: Calibration Tolerance at 25°C, Frequency Stability
over the Operating Temperature Range, Supply Voltage Change, Ouput Load Change, First Year Aging at
25°C, Shock, and Vibration)
3.3Vdc ±10%
5mA Maximum
90% of Vdd Minimum (IOH = -4mA)
10% of Vdd Maximum (IOL = +4mA)
4nSec Maximum (Measured at 20% to 80% of waveform)
50 ±10(%) (Measured at 50% of waveform)
15pF Maximum
CMOS
Tri-State (High Impedance)
90% of Vdd Minimum or No Connect to Enable Output, 10% of Vdd Maximum to Disable Output (High
Impedance)
10µA Maximum (Disabled Output: High Impedance)
1pSec Maximum (12kHz to 20MHz offset frequency)
0.2pSec Typical, 3pSec Maximum
2pSec Typical, 5pSec Maximum
3pSec Typical, 7pSec Maximum
40pSec Typical, 100pSec Maximum
10mSec Maximum
-55°C to +125°C
Supply Voltage
Input Current
Output Voltage Logic High (Voh)
Output Voltage Logic Low (Vol)
Rise/Fall Time
Duty Cycle
Load Drive Capability
Output Logic Type
Logic Control / Additional Output
Tri-State Input Voltage (Vih and Vil)
Standby Current
RMS Phase Jitter
Period Jitter (Deterministic)
Period Jitter (Random)
Period Jitter (RMS)
Period Jitter (pk-pk)
Start Up Time
Storage Temperature Range
ENVIRONMENTAL & MECHANICAL SPECIFICATIONS
ESD Susceptibility
Fine Leak Test
Flammability
Gross Leak Test
Mechanical Shock
Moisture Resistance
Moisture Sensitivity
Resistance to Soldering Heat
Resistance to Solvents
Solderability
Temperature Cycling
Vibration
MIL-STD-883, Method 3015, Class 1, HBM: 1500V
MIL-STD-883, Method 1014, Condition A
UL94-V0
MIL-STD-883, Method 1014, Condition C
MIL-STD-883, Method 2002, Condition B
MIL-STD-883, Method 1004
J-STD-020, MSL 1
MIL-STD-202, Method 210, Condition K
MIL-STD-202, Method 215
MIL-STD-883, Method 2003
MIL-STD-883, Method 1010, Condition B
MIL-STD-883, Method 2007, Condition A
www.ecliptek.com | Specification Subject to Change Without Notice | Rev B 3/11/2011 | Page 1 of 6
EB13C3E1H-27.000M TR
MECHANICAL DIMENSIONS (all dimensions in millimeters)
PIN
CONNECTION
Tri-State
Case/Ground
Output
Supply Voltage
7.00
±0.15
3
5.00
±0.15
MARKING
ORIENTATION
2
1.4 ±01
5.08
±0.15
4
2.60
±0.15
1
1.2 ±0.2
3.68
±0.15
1
2
3
4
LINE MARKING
1
2
3
ECLIPTEK
27.000M
XXYZZ
XX=Ecliptek Manufacturing
Code
Y=Last Digit of the Year
ZZ=Week of the Year
1.6 +0.2/-0.5
Suggested Solder Pad Layout
All Dimensions in Millimeters
2.0 (X4)
2.2 (X4)
2.88
Solder Land
(X4)
1.81
All Tolerances are ±0.1
www.ecliptek.com | Specification Subject to Change Without Notice | Rev B 3/11/2011 | Page 2 of 6
EB13C3E1H-27.000M TR
OUTPUT WAVEFORM & TIMING DIAGRAM
TRI-STATE INPUT
V
IH
V
IL
CLOCK OUTPUT
V
OH
80% of Waveform
50% of Waveform
20% of Waveform
V
OL
OUTPUT DISABLE
(HIGH IMPEDANCE
STATE)
t
PLZ
Fall
Time
Rise
Time
T
W
T
Duty Cycle (%) = T
W
/T x 100
t
PZL
Test Circuit for CMOS Output
Oscilloscope
Frequency
Counter
+
+
Power
Supply
_
+
Voltage
Meter
_
Current
Meter
_
Supply
Voltage
(V
DD
)
Probe
(Note 2)
Output
0.01µF
(Note 1)
0.1µF
(Note 1)
Ground
C
L
(Note 3)
No Connect
or Tri-State
Note 1: An external 0.1µF low frequency tantalum bypass capacitor in parallel with a 0.01µF high frequency
ceramic bypass capacitor close to the package ground and V
DD
pin is required.
Note 2: A low capacitance (<12pF), 10X attenuation factor, high impedance (>10Mohms), and high bandwidth
(>300MHz) passive probe is recommended.
Note 3: Capacitance value C
L
includes sum of all probe and fixture capacitance.
www.ecliptek.com | Specification Subject to Change Without Notice | Rev B 3/11/2011 | Page 3 of 6
EB13C3E1H-27.000M TR
Tape & Reel Dimensions
Quantity Per Reel: 1,000 units
4.0 ±0.1
2.0 ±0.1
DIA 1.5 +0.1/-0.0
0.3 ±0.05
7.5 ±0.1
16 +0.3/-0.1
6.75 ±0.1
A0*
8.0 ±0.1
*Compliant to EIA 481A
B0*
K0*
1.5 MIN
DIA 40 MIN
Access Hole at
Slot Location
22.4 MAX
360 MAX
DIA 50 MIN
DIA 20.2 MIN
2.5 MIN Width
10.0 MIN Depth
Tape slot in Core
for Tape Start
16.4 +2/-0
DIA 13.0 ±0.2
www.ecliptek.com | Specification Subject to Change Without Notice | Rev B 3/11/2011 | Page 4 of 6
EB13C3E1H-27.000M TR
Recommended Solder Reflow Methods
T
P
Critical Zone
T
L
to T
P
Ramp-up
Ramp-down
Temperature (T)
T
L
T
S
Max
T
S
Min
t
S
Preheat
t 25°C to Peak
t
L
t
P
Time (t)
High Temperature Infrared/Convection
T
S
MAX to T
L
(Ramp-up Rate)
Preheat
- Temperature Minimum (T
S
MIN)
- Temperature Typical (T
S
TYP)
- Temperature Maximum (T
S
MAX)
- Time (t
S
MIN)
Ramp-up Rate (T
L
to T
P
)
Time Maintained Above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Target Peak Temperature (T
P
Target)
Time within 5°C of actual peak (t
p
)
Ramp-down Rate
Time 25°C to Peak Temperature (t)
Moisture Sensitivity Level
Additional Notes
3°C/second Maximum
150°C
175°C
200°C
60 - 180 Seconds
3°C/second Maximum
217°C
60 - 150 Seconds
260°C Maximum for 10 Seconds Maximum
250°C +0/-5°C
20 - 40 seconds
6°C/second Maximum
8 minutes Maximum
Level 1
Temperatures shown are applied to body of device.
www.ecliptek.com | Specification Subject to Change Without Notice | Rev B 3/11/2011 | Page 5 of 6
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