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2N5945

Description
Trans GP BJT NPN 16V 2A
CategoryDiscrete semiconductor    The transistor   
File Size47KB,1 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Parametric View All

2N5945 Overview

Trans GP BJT NPN 16V 2A

2N5945 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknow
Base Number Matches1
na.
i., O
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N5945
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .280 4L STUD
FEATURES:
• Common Emitter
• P
G
= 9.0 dB at 2.0 W/470 MHz
OmnigolcF
M
Metalization System
MAXIMUM RATINGS
Ic
45"_
s
-
,
I C
Era
LJLi
n
r
c
-i
E
'
DIM
A
T "nrii
p
-H
J
'
' '— *8-32 UNC
MAXIMUM
1,055/28.80
,230/5.84
,285 / 7.24
.007/0.18
137/3.48
0.8 A
36V
16V
MINIMUM
1,010/25.65
,220/559
.370 / 6.86
.003/008
117/2.97
.572/14.53
.130/3.30
.245/6.22
.640/1626
.175/4.45
.275/699
.217/5.51
.285/7.24
,255/6-48
VCBO
VCEO
VEBO
PDISS
L
4.0V
1 5 W @ T
C
= 2 5
°C
-65 °C to +200
°C
a
c
D
E
F
G
H
I
J
K
TSTG
9jc
-65 °C to +150
°C
11.6°C/W
CHARACTERISTICS r
c
= 25°c
TEST CONDITIONS
SYMBOL
l
c
= 100mA
BV
CEO
l
c
= 100mA
BV
CES
BV
EBO
ICBO
MINIMUM TYPICAL MAXIMUM
16
36
4.0
1.0
UNITS
V
V
V
mA
..
.
pF
IE = 2.0 mA
V
CB
= 15V
VCE = 5.0 V
l
c
= 200 mA
HFE
C
0
b
20
18
10
25
V
CB
= 12.5V
V
cc
= 12.5V
POUT = 4.0 W
f= 1.0 MHz
f = 470 MHz
9.0
60
PG
Tic
dB
%
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time ofgoing to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N J
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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