CMOS Low Voltage
2 Ω SPST Switches
ADG701/ADG702
FEATURES
1.8 V to 5.5 V single supply
2 Ω (typical) on resistance
Low on resistance flatness
–3 dB bandwidth > 200 MHz
Rail-to-rail operation
Fast switching times
t
ON
18 ns
t
OFF
12 ns
Typical power consumption < 0.01 μW
TTL/CMOS-compatible
FUNCTIONAL BLOCK DIAGRAM
ADG701
S
D
S
ADG702
D
IN
IN
00039-001
SWITCHES SHOWN FOR A LOGIC 1 INPUT
Figure 1.
APPLICATIONS
Battery-powered systems
Communications systems
Sample-and-hold systems
Audio signal routing
Video switching
Mechanical reed relay replacement
GENERAL DESCRIPTION
The ADG701/ADG702 are monolithic CMOS SPST switches.
These switches are designed on an advanced submicron process
that provides low power dissipation yet high switching speed,
low on resistance, and low leakage currents. In addition, −3 dB
bandwidths of greater than 200 MHz can be achieved.
The ADG701/ADG702 can operate from a single 1.8 V to 5.5 V
supply, making it ideal for use in battery-powered instruments
and with the new generation of DACs and ADCs from Analog
Devices, Inc.
Figure 1 shows that with a logic input of 1, the switch of the
ADG701 is closed and that of the ADG702 is open. Each switch
conducts equally well in both directions when on.
The ADG701/ADG702 are available in 5-lead SOT-23, 6-lead
SOT-23, and 8-lead MSOP packages.
PRODUCT HIGHLIGHTS
1.
1.8 V to 5.5 V Single-Supply Operation.
The ADG701/ADG702 offer high performance, including
low on resistance and fast switching times, and are fully
specified and guaranteed with 3 V and 5 V supply rails.
Very Low R
ON
(3 Ω Maximum at 5 V, 5 Ω Maximum at 3 V).
At 1.8 V operation, R
ON
is typically 40 Ω over the tempera-
ture range.
On Resistance Flatness R
FLAT(ON)
(1 Ω Maximum).
−3 dB Bandwidth > 200 MHz.
Low Power Dissipation.
CMOS construction ensures low power dissipation.
Fast t
ON
/t
OFF
.
2.
3.
4.
5.
6.
Table 1. Related Devices
Part No.
ADG701L/ADG702L
Description
Low voltage 2 Ω SPST switches
with guaranteed leakage
specifications
Rev. C
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
© 2006 Analog Devices, Inc. All rights reserved.
ADG701/ADG702
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Product Highlights ........................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 5
ESD Caution.................................................................................. 5
Pin Configurations and Function Descriptions ........................... 6
Typical Performance Characteristics ..............................................7
Terminology .......................................................................................8
Test Circuits........................................................................................9
Applications Information .............................................................. 10
ADG701/ADG702 Supply Voltages......................................... 10
Bandwidth ................................................................................... 10
Off Isolation ................................................................................ 10
Outline Dimensions ....................................................................... 11
Ordering Guide .......................................................................... 12
REVISION HISTORY
7/06—Rev. B to Rev. C
Changes to Product Highlights....................................................... 1
Added Table 1.................................................................................... 1
Changes to Table 2............................................................................ 3
Changes to Table 3............................................................................ 4
Added Pb-Free Reflow Soldering to Absolute Maximum Ratings ..5
Changes to Ordering Guide .......................................................... 13
6/04—Rev. A to Rev. B
Updated Format..................................................................Universal
Added 5-Lead SOT-23 Package ........................................Universal
Updated Outline Dimensions ....................................................... 10
Changes to Ordering Guide .......................................................... 11
8/98—Rev. 0 to Rev. A
Rev. C | Page 2 of 12
ADG701/ADG702
SPECIFICATIONS
V
DD
= 5 V ± 10%, GND = 0 V. Temperature range for B version is −40°C to +85°C, unless otherwise noted.
Table 2.
B Version
–40°C to
+85°C
0 V to V
DD
2
3
0.5
4
1.0
LEAKAGE CURRENTS
Source OFF Leakage, I
S
(OFF)
Drain OFF Leakage, I
D
(OFF)
Channel ON Leakage, I
D
, I
S
(ON)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
DYNAMIC CHARACTERISTICS
t
ON
t
OFF
Charge Injection
Off Isolation
Bandwidth –3 dB
C
S
(OFF)
C
D
(OFF)
C
D
, C
S
(ON)
POWER REQUIREMENTS
I
DD
1
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (R
ON
)
On Resistance Flatness (R
FLAT(ON)
)
+25°C
Unit
V
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA typ
nA typ
Test Conditions/Comments
V
S
= 0 V to V
DD
, I
S
= –10 mA; Figure 11
V
S
= 0 V to V
DD
, I
S
= –10 mA
V
DD
= 5.5 V
V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V; Figure 12
V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V; Figure 12
V
S
= V
D
= 1 V, or 4.5 V; Figure 13
±0.01
±0.01
±0.01
2.4
0.8
0.005
±0.1
12
18
8
12
5
–55
–75
200
17
17
38
V min
V max
μA typ
μA max
ns typ
ns max
ns typ
ns max
pC typ
dB typ
dB typ
MHz typ
pF typ
pF typ
pF typ
V
IN
= V
INL
or V
INH
R
L
= 300 Ω, C
L
= 35 pF
V
S
= 3 V; Figure 14
R
L
= 300 Ω, C
L
= 35 pF
V
S
= 3 V; Figure 14
V
S
= 2 V, R
S
= 0 Ω, C
L
= 1 nF; Figure 15
R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; Figure 16
R
L
= 50 Ω, C
L
= 5 pF; Figure 17
V
DD
= 5.5 V
Digital inputs = 0 V or 5 V
0.001
1.0
μA typ
μA max
1
Guaranteed by design, not subject to production test.
Rev. C | Page 3 of 12
ADG701/ADG702
V
DD
= 3 V ± 10%, GND = 0 V. Temperature range for B version is −40°C to +85°C, unless otherwise noted.
Table 3.
B Version
−40°C to
+85°C
0 V to V
DD
3.5
5
1.5
±0.01
±0.01
±0.01
2.0
0.4
0.005
±0.1
DYNAMIC CHARACTERISTICS
1
t
ON
t
OFF
Charge Injection
Off Isolation
Bandwidth −3 dB
C
S
(OFF)
C
D
(OFF)
C
D
, C
S
(ON)
POWER REQUIREMENTS
I
DD
14
20
8
13
4
−55
−75
200
17
17
38
6
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (R
ON
)
On Resistance Flatness (R
FLAT(ON)
)
LEAKAGE CURRENTS
Source OFF Leakage I
S
(OFF)
Drain OFF Leakage I
D
(OFF)
Channel ON Leakage I
D
, I
S
(ON)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
+25°C
Unit
V
Ω typ
Ω max
Ω typ
nA typ
nA typ
nA typ
V min
V max
μA typ
μA max
ns typ
ns max
ns typ
ns max
pC typ
dB typ
dB typ
MHz typ
pF typ
pF typ
pF typ
Test Conditions/Comments
V
S
= 0 V to V
DD
, I
S
= −10 mA; Figure 11
V
S
= 0 V to V
DD
, I
S
= −10 mA
V
DD
= 3.3 V
V
S
= 3 V/1 V, V
D
= 1 V/3 V; Figure 12
V
S
= 3 V/1 V, V
D
= 1 V/3 V; Figure 12
V = V
D
= 1 V, or 3 V; Figure 13
V
IN
= V
INL
or V
INH
R
L
= 300 Ω, C
L
= 35 pF
V
S
= 2 V, Figure 14
R
L
= 300 Ω, C
L
= 35 pF
V
S
= 2 V, Figure 14
V
S
= 1.5 V, R
S
= 0 Ω, C
L
= 1 nF; Figure 15
R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; Figure 16
R
L
= 50 Ω, C
L
= 5 pF; Figure 17
V
DD
= 3.3 V
Digital inputs = 0 V or 3 V
0.001
1.0
μA typ
μA max
1
Guaranteed by design, not subject to production test.
Rev. C | Page 4 of 12
ADG701/ADG702
ABSOLUTE MAXIMUM RATINGS
T
A
= +25°C, unless otherwise noted.
Table 4.
Parameter
V
DD
to GND
Analog and Digital Inputs
1
Rating
−0.3 V to +7 V
−0.3 V to V
DD
+ 0.3 V
or 30 mA, whichever
occurs first
30 mA
100 mA, pulsed at 1 ms,
10% duty cycle maximum
−40°C to +85°C
−65°C to +150°C
150°C
315 mW
206°C/W
44°C/W
282 mW
229.6°C/W
91.99°C/W
215°C
220°C
260(+0/−5)°C
10 sec to 40 sec
2 kV
Continuous Current, S or D
Peak Current, S or D
Operating Temperature Range
Industrial (B Version)
Storage Temperature Range
Junction Temperature
MSOP Package, Power Dissipation
θ
JA
Thermal Impedance
θ
JC
Thermal Impedance
SOT-23 Package, Power Dissipation
θ
JA
Thermal Impedance
θ
JC
Thermal Impedance
Lead Temperature, Soldering
Vapor Phase (60 sec)
Infrared (15 sec)
Pb-free Reflow Soldering
Peak Temperature
Time at Peak Temperature
ESD
1
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Only one absolute maximum rating may be applied at any
one time.
Table 5. Truth Table
ADG701 In
0
1
ADG702 In
1
0
Switch Condition
Off
On
Overvoltages at IN, S, or D are clamped by internal diodes. Current should be
limited to the maximum ratings given.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. C | Page 5 of 12
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