2SC2951 datasheet, PDF - EEWORLD Datasheet

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2SC2951: DescriptionRF Small Signal Bipolar Transistor, 0.44A I(C), 1-Element, X Band, Silicon, NPN, FM-2; CategoryDiscrete semiconductor The transistor; File Size21KB，1 Pages; ManufacturerAdvanced Semiconductor, Inc.

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2SC2951 Overview

RF Small Signal Bipolar Transistor, 0.44A I(C), 1-Element, X Band, Silicon, NPN, FM-2

2SC2951 Parametric

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, R-CDFM-F2
Contacts	2
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.44 A
Collector-based maximum capacity	4 pF
Collector-emitter maximum voltage	16 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
highest frequency band	X BAND
JESD-30 code	R-CDFM-F2
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	9.7 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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2SC2951

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION:

The

ASI

2SC2951

is a High

Frequency Transistor Designed for

General Purpose Oscillator

Applications up to 10 GHz.

PACKAGE STYLE .200 2L FLG

FEATURES:

•

P

OSC

= 630 mW Typical at 7.5 GHz

•

Omnigold™

Metallization System

MAXIMUM RATINGS

I

C

V

CE

V

CB

P

DISS

T

J

T

STG

θ

JC

440 mA

16 V

25 V

9.7 W @ T

C

= 25 °C

-65 to +200 °C

18 °C/W

CHARACTERISTICS

SYMBOL

BV

CEO

BV

CBO

BV

EBO

I

CBO

I

EBO

h

FE

C

OB

S21

P

OSC

2

T

C

= 25 °C

TEST CONDITIONS

I

C

= 1.0 mA

I

C

= 100

µA

I

E

= 100

µA

V

CB

= 15 V

V

EB

= 1.0 V

V

CE

= 8.0 V

V

CB

= 10 V

V

CC

= 8.0 V

V

CE

= 12 V

I

C

= 200 mA

I

C

= 200 mA

I

C

= 200 mA

f = 1.0 MHz

f = 1.0 GHz

f = 7.5 GHz

MINIMUM TYPICAL MAXIMUM

16

25

1.5

1.0

4.0

20

2.9

3.5

630

200

4.0

UNITS

V

µ

A

µA

---

pF

dB

mW

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

•

NORTH HOLLYWOOD, CA 91605

•

(818) 982-1202

•

FAX (818) 765-3004

Specifications are subject to change without notice.

REV. B

1/1

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