2SC2952 datasheet, PDF - EEWORLD Datasheet

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2SC2952: DescriptionRF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-39, TO-39, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size27KB，1 Pages; ManufacturerAdvanced Semiconductor, Inc.

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2SC2952 Overview

RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-39, TO-39, 3 PIN

2SC2952 Parametric

Parameter Name	Attribute value
Parts packaging code	TO-39
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.25 A
Collector-based maximum capacity	2.5 pF
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
highest frequency band	ULTRA HIGH FREQUENCY BAND
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power dissipation(Abs)	3.5 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	3300 MHz
Base Number Matches	1

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2SC2952

NPN SILICON HIGH FREQUENCY TRANSISTOR

PACKAGE STYLE TO-39

DESCRIPTION:

The

2SC2592

is a High Frequency

Transistor Designed for General

Purpose VHF-UHF Amplifier

Applications.

MAXIMUM RATINGS

I

C

V

CE

P

DISS

T

J

T

STG

θ

JC

250 mA

30 V

3.5 W @ T

C

= 25 C

-65 to +200 C

50 C/W

O

1 = Emitter

2 = Base

3 & 4 = Collector (Case)

CHARACTERISTICS

SYMBOL

BV

CEO

BV

CBO

BV

EBO

I

CBO

h

FE

f

t

C

CB

S21E

NF

2

T

C

= 25 C

O

TEST CONDITIONS

I

C

= 1.0 mA

I

C

= 100

µA

I

E

= 100

µA

V

CB

= 20 V

V

CE

= 10 V

V

CE

= 10 V

V

CB

= 10 V

V

CE

= 10 V

V

CE

= 10 V

I

E

= 60 mA

I

C

= 10 mA V

I

C

= 80 mA

I

E

= 60 mA

f = 200 MHz

f = 1.0 MHz

f = 500 MHz

MINIMUM TYPICAL MAXIMUM

20

30

3

10

30

2800

80

3300

2.5

8.5

3.5

200

UNITS

V

µ

A

---

MHz

pF

dB

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

•

NORTH HOLLYWOOD, CA 91605

•

(818) 982-1202

•

FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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