|
HM3-6561-9 |
HM3-6561B-9 |
| Description |
Standard SRAM, 256X4, 300ns, CMOS, PDIP18 |
Standard SRAM, 256X4, 220ns, CMOS, PDIP18 |
| Is it Rohs certified? |
incompatible |
incompatible |
| package instruction |
DIP, DIP18,.3 |
DIP, DIP18,.3 |
| Reach Compliance Code |
unknown |
unknown |
| ECCN code |
EAR99 |
EAR99 |
| Maximum access time |
300 ns |
220 ns |
| Other features |
ADDRESS LATCH |
ADDRESS LATCH |
| JESD-30 code |
R-PDIP-T18 |
R-PDIP-T18 |
| JESD-609 code |
e0 |
e0 |
| memory density |
1024 bit |
1024 bit |
| Memory IC Type |
STANDARD SRAM |
STANDARD SRAM |
| memory width |
4 |
4 |
| Number of functions |
1 |
1 |
| Number of ports |
1 |
1 |
| Number of terminals |
18 |
18 |
| word count |
256 words |
256 words |
| character code |
256 |
256 |
| Operating mode |
ASYNCHRONOUS |
ASYNCHRONOUS |
| Maximum operating temperature |
85 °C |
85 °C |
| Minimum operating temperature |
-40 °C |
-40 °C |
| organize |
256X4 |
256X4 |
| Output characteristics |
3-STATE |
3-STATE |
| Exportable |
NO |
NO |
| Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
| encapsulated code |
DIP |
DIP |
| Encapsulate equivalent code |
DIP18,.3 |
DIP18,.3 |
| Package shape |
RECTANGULAR |
RECTANGULAR |
| Package form |
IN-LINE |
IN-LINE |
| Parallel/Serial |
PARALLEL |
PARALLEL |
| Certification status |
Not Qualified |
Not Qualified |
| Maximum standby current |
0.00001 A |
0.00001 A |
| Minimum standby current |
2 V |
2 V |
| Maximum slew rate |
0.0063 mA |
0.0072 mA |
| Maximum supply voltage (Vsup) |
5.5 V |
5.5 V |
| Minimum supply voltage (Vsup) |
4.5 V |
4.5 V |
| Nominal supply voltage (Vsup) |
5 V |
5 V |
| surface mount |
NO |
NO |
| technology |
CMOS |
CMOS |
| Temperature level |
INDUSTRIAL |
INDUSTRIAL |
| Terminal surface |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
| Terminal form |
THROUGH-HOLE |
THROUGH-HOLE |
| Terminal pitch |
2.54 mm |
2.54 mm |
| Terminal location |
DUAL |
DUAL |