PRELIMINARY
PDM41038
1 Megabit Static RAM
256K x 4-Bit
Revolutionary Pinout
Features
s
High speed access times
Com’l: 10, 12, 15, 17 and 20 ns
Ind’l: 12, 15, 17 and 20 ns
s
Low power operation (typical)
- PDM41038SA
Active: 400 mW
Standby: 150 mW
- PDM41038LA
Active: 350 mW
Standby: 100 mW
s
Single +5V (±10%) power supply
s
TTL-compatible inputs and outputs
s
Packages
Plastic SOJ (300 mil) - SO 3
Plastic SOJ (400 mil) - SO4
Plastic TSOP - T
1
2
3
4
5
6
7
8
9
10
11
12
Description
The PDM41038 is a high-performance CMOS static
RAM organized as 262,144 x 4 bits. This product is
produced in Paradigm’s proprietary CMOS
technology which offers the designer the highest
speed parts. Writing to this device is accomplished
when the write enable (WE) and the chip enable
(CE) inputs are both LOW. Reading is accomplished
when WE remains HIGH and CE and OE are both
LOW.
The PDM41038 operates from a single +5V power
supply and all the inputs and outputs are fully TTL-
compatible. The PDM41038 comes in two versions,
the standard power version PDM41038SA and a low
power version the PDM41038LA. The two versions
are functionally the same and only differ in their
power consumption.
The PDM41038 is available in a 32-pin 300-mil SOJ,
32-pin TSOP, and a 32-pin 400-mil SOJ for surface
mount applications in revolutionary pinout.
Functional Block Diagram
Rev. 1.0 - 7/17/96
4-17
PRELIMINARY
PDM41038
Pin Configuration
TSOP
SOJ
Pin Description
Name
A17-A0
I/O3-I/O0
OE
WE
CE
NC
V
CC
V
SS
Description
Address Inputs
Data Inputs/Outputs
Output Enable Input
Write Enable Input
Chip Enable Input
No Connect
Power (+5V)
Ground
Truth Table
(1)
OE
X
L
X
H
WE
X
H
L
H
CE
H
L
L
L
I/O
Hi-Z
D
OUT
D
IN
Hi-Z
MODE
Standby
Read
Write
Output Disable
NOTE: 1. H = V
IH
, L = V
IL
, X = DON’T CARE
Absolute Maximum Ratings
(1)
Symbol
V
TERM
T
BIAS
T
STG
P
T
I
OUT
Rating
Terminal Voltage with Respect to V
SS
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current
Com’l.
–0.5 to +7.0
–55 to +125
–55 to +125
1.0
50
Ind.
–0.5 to +7.0
–65 to +135
–65 to +150
1.0
50
Unit
V
°C
°C
W
mA
NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RA
TINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maxi-
mum rating conditions for extended periods may affect reliability.
Recommended DC Operating Conditions
Symbol
V
CC
V
SS
Industrial
Commercial
Parameter
Supply Voltage
Supply Voltage
Ambient Temperature
Ambient Temperature
Min.
4.5
0
–40
0
Typ.
5.0
0
25
25
Max.
5.5
0
85
70
Unit
V
V
°C
°C
4-18
Rev. 1.0 - 7/17/96
PRELIMINARY
PDM41038
DC Electrical Characteristics
(V
CC
= 5.0V ± 10%)
PDM41038SA
Symbol
I
LI
I
LO
V
IL
V
IH
V
OL
V
OH
Parameter
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
I
OL
= 8 mA, V
CC
= Min.
I
OL
= 10 mA, V
CC
= Min.
I
OH
= –4 mA, V
CC
= Min.
Test Conditions
V
CC
= MAX., V
IN
= V
SS
to V
CC
V
CC
= MAX.,
CE = V
IH
, V
OUT
= V
SS
to V
CC
Com’l/
Ind.
Com’l/
Ind.
Min.
–5
–5
–0.5
(1)
2.2
—
—
2.4
Max.
5
5
0.8
6.0
0.4
0.5
—
PDM41038LA
Min.
–5
–5
–0.5
(1)
2.2
—
—
2.4
Max.
5
5
0.8
6.0
0.4
0.5
—
µA
µA
V
V
V
V
V
Unit
1
2
3
4
NOTE: 1. V
IL
(min) = –3.0V for pulse width less than 20 ns
Power Supply Characteristics
-10
Symbol Parameter
I
CC
Operating Current
CE = V
IL
f = f
MAX
= 1/t
RC
V
CC
= Max.
I
OUT
= 0 mA
I
SB
Standby Current
CE = V
IH
f = f
MAX
= 1/t
RC
V
CC
= Max.
I
SB1
Full Standby Current
CE
≥
V
HC
f=0
V
CC
= Max.,
V
IN
≥
V
CC
– 0.2V or
≤
0.2V
-12
-15
-17
-20
Unit
mA
mA
Power Com’l. Com’l Ind. Com’l Ind. Com’l Ind. Com’l Ind.
SA
250
230
240
185
195
165
175
155
165
LA
230
210
220
165
175
155
165
140
150
5
6
7
8
9
SA
LA
SA
LA
80
75
20
10
70
65
20
10
70
65
25
10
55
50
10
5
55
50
15
10
50
45
10
5
50
45
15
10
45
40
10
5
45
40
15
10
mA
mA
mA
mA
NOTES: All values are maximum guaranteed values.
V
LC
≤
0.2V, V
HC
≥
V
CC
– 0.2V
Capacitance
(1)
(T
A
= +25°C, f = 1.0 MHz)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Max.
8
8
Unit
pF
pF
10
11
12
NOTE:1. This parameter is determined by device characterization but is not production tested.
Rev. 1.0 - 7/17/96
4-19
PRELIMINARY
PDM41038
Read Cycle No. 1
(4, 5)
1
2
Read Cycle No. 2
(2, 4, 6)
3
4
5
6
AC Electrical Characteristics
Description
READ Cycle
READ cycle time
Address access time
Chip enable access time
Output hold from address change
Chip enable to output in low Z
(1,3)
Chip disable to output in high Z
(1,2,3)
Chip enable to power up time
(3)
Chip disable to power down time
(3)
Output enable access time
Output enable to output in low Z
(1,3)
Output disable to output in high Z
(1,3)
Sym
t
RC
t
AA
t
ACE
t
OH
t
LZCE
t
HZCE
t
PU
t
PD
t
AOE
t
LZOE
t
HZOE
0
6
0
10
6
0
6
3
5
6
0
12
6
0
6
-10
(7)
Min.
10
10
10
3
5
6
0
15
6
0
6
Max.
-12
(7)
Min.
12
12
12
3
5
7
0
17
6
0
6
Max.
-15
Min.
15
15
15
3
5
7
0
20
6
Max.
-17
Min.
17
17
17
3
5
8
Max.
-20
Min.
20
20
20
Max. Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
7
8
9
10
11
12
Notes referenced are after Data Retention Table.
Rev. 1.0 - 7/17/96
4-21
Power technology
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