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2SB1366O

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size176KB,4 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

2SB1366O Overview

Transistor

2SB1366O Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1366
DESCRIPTION
・With
TO-220F package
・Complement
to type 2SD2058
・Low
collector saturation voltage:
V
CE(SAT)
=-1.0V(Max) at I
C
=-2A,I
B
=-0.2A
・Collector
power dissipation:
P
C
=25W(T
C
=25
)
APPLICATIONS
・With
general purpose applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
固电
导½
ANG
H
Open emitter
Fig.1 simplified outline (TO-220F) and symbol
INC
Collector-base voltage
MIC
E SE
Open base
Open collector
CONDITIONS
OR
UCT
ND
O
VALUE
-60
-60
-7
-3
-0.5
UNIT
V
V
V
A
A
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
T
a
=25℃
2.0
W
25
150
-55~150
P
C
Collector dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature

2SB1366O Related Products

2SB1366O 2SB1366 2SB1366Y
Description Transistor Transistor Transistor
Reach Compliance Code unknow unknow unknow
Base Number Matches 1 1 1

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