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2SB1366F-Y-BP

Description
Power Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size105KB,2 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
Download Datasheet Parametric Compare View All

2SB1366F-Y-BP Overview

Power Bipolar Transistor,

2SB1366F-Y-BP Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Code_compli
ECCN codeEAR99
Humidity sensitivity level1
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
MCC
Micro Commercial Components
TM
  omponents
20736
Marilla
Street Chatsworth

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2SB1366F-O
2SB1366F-Y
Features
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Low V
CE(SAT)
:V
CE(SAT)
=-1.0V(Max.)(I
C
/I
B
=-2A/-0.2A)
Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Halogen
free available upon request by adding suffix "-HF"
PNP Silicon
Power Transistors
Maximum Ratings
Mounting Torgue:
5
in-lbs Maximum
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
Symbol
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
T
A
=25
O
C
Junction Temperature
Storage Temperature
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=-50mAdc, I
B
=0)
Collector-Base Cutoff Current
(V
CB
=-60Vdc,I
E
=0)
Emitter-Base Cutoff Current
(V
EB
=-7.0Vdc, I
C
=0)
Forward Current Transfer ratio
(I
C
=-0.5Adc, V
CE
=-5.0Vdc)
Forward Current Transfer ratio
(I
C
=-3.0Adc, V
CE
=-5.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=-2.0Adc, I
B
=-0.2Adc)
Base-Emitter Saturation Voltage
(I
C
=-0.5Adc, V
CE
=-5.0Vdc)
Transition Frequency
(V
CE
=-5.0Vdc, I
C
=-0.5Adc)
Collector Output Capacitance
(V
CB
=-10Vdc, I
E
=0, f=1.0MHz)
Fall time
(I
C
=-2Adc, I
B1
=
-I
B2
=
-0.2Adc,V
CC
= -30Vdc)
Storage time
(I
C
=-2Adc, I
B1
=
-I
B2
=
-0.2Adc,V
CC
= -30Vdc)
TO-220F
Rating
-60
-60
-7.0
-3.0
2.0
-55 to +150
-55 to +150
Min
-60
---
---
Typ
---
---
---
Max
---
-100
-100
Unit
V
V
V
A
W
O
M
N
A
B
C
C
O
C
1
2
3
D
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Units
OFF CHARACTERISTICS
V
(BR)CEO
I
CBO
I
EBO
Vdc
uAdc
uAdc
P
F
J
E
G
Q
H
PIN 1.
PIN 2.
PIN 3.
BASE
COLLECTOR
EMITTER
ON CHARACTERISTICS
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE
f
T
C
ob
t
f
t
s
60
20
---
---
---
---
---
---
---
---
---
---
9.0
150
0.4
1.7
200
---
-1.0
-1.0
---
---
---
---
---
---
Vdc
Vdc
MHz
pF
us
us
DIM
A
B
C
D
E
F
G
H
J
M
N
P
Q
DIMENSIONS
INCHES
MM
MIN
MAX
MIN
MAX
.392
.408
9.96
10.36
.138
3.50
.106
2.70
.583
.598
14.80
15.20
.520
13.20
.142
.158
3.60
4.00
.100
2.54
.020
.030
0.50
0.75
.043
.053
1.10
1.35
.169
.185
4.30
4.70
.110
.126
2.80
3.20
.098
.114
2.50
2.90
.020
.030
0.50
0.75
NOTE
Φ
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.
2. h
FE
Range: O: 60~120, Y:100~200
www.mccsemi.com
Revision: A
1 of
2
2013/03/08

2SB1366F-Y-BP Related Products

2SB1366F-Y-BP 2SB1366F-O-BP-HF 2SB1366F-O-BP 2SB1366F-Y-BP-HF
Description Power Bipolar Transistor, Power Bipolar Transistor, Power Bipolar Transistor, Power Bipolar Transistor,
Is it Rohs certified? conform to conform to conform to conform to
Reach Compliance Code _compli _compli _compli _compli
ECCN code EAR99 EAR99 EAR99 EAR99
Humidity sensitivity level 1 1 1 1
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1 1

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