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T320F11BEM

Description
Silicon Controlled Rectifier, 600A I(T)RMS, 320000mA I(T), 1100V V(DRM), 1100V V(RRM), 1 Element,
CategoryAnalog mixed-signal IC    Trigger device   
File Size151KB,2 Pages
ManufacturerEUPEC [eupec GmbH]
Download Datasheet Parametric View All

T320F11BEM Overview

Silicon Controlled Rectifier, 600A I(T)RMS, 320000mA I(T), 1100V V(DRM), 1100V V(RRM), 1 Element,

T320F11BEM Parametric

Parameter NameAttribute value
MakerEUPEC [eupec GmbH]
Reach Compliance Codeunknown
Other featuresFAST
Shell connectionANODE
Nominal circuit commutation break time20 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current250 mA
Maximum DC gate trigger voltage2.2 V
Maximum holding current250 mA
JESD-30 codeO-MUPM-H3
Maximum leakage current50 mA
On-state non-repetitive peak current10750 A
Number of components1
Number of terminals3
Maximum on-state current320000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Certification statusNot Qualified
Maximum rms on-state current600 A
Off-state repetitive peak voltage1100 V
Repeated peak reverse voltage1100 V
surface mountNO
Terminal formHIGH CURRENT CABLE
Terminal locationUPPER
Trigger device typeSCR
T320 F
Elektrische Eigenschaften
iöchstzulässige Werte
Periodische Vorwärts- und
Rückwärts-Spitzensperrspannung
Vorwärts-Stoßspitzen-
sperrspannung
Rückwärts-Stoßspitzen-
sperrspannung
Durchlaßstrom-Grenzeffektivwert
Dauergrenzstrom
Electrical properties
Aaximum rated values
repetitive peak forward off-state
and reverse voltages
non repetitive peak
forward off-state voltage
non repetitive peak
reverse voltage
RMS on-state current
average on-state current
surge current
Grenzlastintegral
Kritische Stromsteilheit
Kritische Spannungssteilheit
Pt-value
critical rate of rise of on-state current
critical rate of rise of off-state voltage
t, = -4ooc...t,,,,
V
DRM>
VRRM
800,1000
1100,1200
1300*
t, =
-4o”C...t”,,,,
t, = + 250C...t”,,,,
VDS, = VD,,
v
v
v
VRSM = VR,,
+lOO
600
320
382
10750
9150
580
420
200
‘)
1)
v
A
A
A
A
A
kA%
kA’s
Alps
VI@
Vlps
VI@
Vlps
ITRMSM
tc = 85°C
tc =
75°C
t, =
25°C t, = 10 ms
t, = t,j max, t, =
10 ms
t, =
25”C, t, = 10 ms
t, = t, max, t, =
10 ms
V~ c
67% vDRM, f = 50 Hz
iGM =
1 A, di,$dt = 1 Alps
L, = L, max, VD = 67% VDRM
ITAVM
ITSM
12t
(di/dt),,
50 50
(dv/dt),, B:
c*:
500 500
L:
500 50
M*: 1000 500
Charakteristische Werte
Durchlaßspannung
Schleusenspannung
Ersatzwiderstand
Zündstrom
Zündspannung
Nicht zündender Steuerstrom
Nicht zündende Steuerspannung
Haltestrom
Einraststrom
Vorwärts- u. Rückwärts-Sperrstrom
Zündverzug
Freiwerdezeit
Characteristic values
on-state voltage
threshold voltage
slope resistance
gate trigger current
gate trigger voltage
gate non-trigger current
gate non-trigger voltage
holding current
latching current
forward off-state and reverse Currents
gate controlled delay time
circuit commutated turn-off time
t, = t, max,
iT = 1200 A
t, = t, max
f = f max
t, =
25”C, vg = 12 V
t, =
25°C VD = 12 V
t, = t”, maxr VD=
1 2 v
t, = t, max, VD =
085 Vom
t, =
25°C vg = 12 V, FIA = 10 n
f, =
25% v,, = 12 V, RGK > 10 Q
iGM =
1 A, dic/dt = 1 Alps, t, = 20 ps
L, = L, maxl VD = VDRMZ VR = VRRM
VT
vT(TO)
IT
IGT
VGT
[GD
VGD
IH
IL
max.
max.
max.
max.
max.
max.
max.
max.
max.
max.
max.
max.
1,95
1,15
0,42
250
2,2
10
0,25
250
1
50
1,5
20
25
30
v
v
mQ
mA
v
mA
V
mA
A
mA
Irs
ps
1s
r*s
iD? iR
bd
t,
f =
25”C, iGM
= 1 A, diG/dt = 1 Alls
siehe Techn. Erl./see Techn. Inf.
E:
F:
G:
Thermische Eigenschaften
Innerer Wärmewiderstand
Höchstzul. Sperrschichttemperatur
Betriebstemperatur
Lagertemperatur
Mechanische Eigenschaften
Si-Element mit Druckkontakt
Anzugsdrehmoment
Gewicht
Kriechstrecke
Feuchteklasse
Schwingfestigkeit
Maßbild B
*
Thermal properties
thermal resistance, junction to case
max. junction temperature
Operating temperature
storage temperature
Mechanical properties
Si-pellet with pressure contact
tightening torque
weight
Creepage distance
humidity classification
Vibration resistance
outline B
M
G
DIN 40040
f=50Hz
DIN 41692-20463
e = 180” es,
sin
DC
RthJc
max.
max.
t, max
t
COP
t s?3
0,085”cIw
0,082”ClW
125°C
-4O... + 125°C
-4O... + 125°C
-
tYP.
j
60Nm
600 g
12 mm
C
50 m/s2
Seitelpage 154
Für größere Stückzahlen bitte Liefertermin erfragen/Delivery for larger quantities on request
1) Werte nach DIN IEC 747-6 (ohne vorausgehende Kommutierung)/Values to DIN IEC 747-6 (without prior commutation)
2) Unmittelbar nach der Freiwerdezeit, vgl. Meßbedingungen für t,/lmmediately after circuit commutated turn-off time, see Parameters t,
82

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