2N6724LEADFREE datasheet, PDF - EEWORLD Datasheet

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2N6724LEADFREE: DescriptionSmall Signal Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, TO-237, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size574KB，3 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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2N6724LEADFREE Overview

Small Signal Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, TO-237, 3 PIN

2N6724LEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	TO-237AA
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	40 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	4000
JEDEC-95 code	TO-237AA
JESD-30 code	O-PBCY-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN (315)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	10
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	1 MHz
Base Number Matches	1

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2N6724

2N6725

w w w. c e n t r a l s e m i . c o m

SILICON

NPN DARLINGTON

POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N6724 and

2N6725 are silicon NPN Darlington power transistors

designed for amplifier applications.

MARKING: FULL PART NUMBER

TO-237 CASE

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

SYMBOL

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

Continuous Collector Current

Continuous Base Current

Power Dissipation (TC=25°C)

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

ICBO

IEBO

BVCBO

BVCES

BVEBO

VCE(SAT)

VBE(ON)

hFE

Cob

CHARACTERISTICS:

(TA=25°C)

TEST CONDITIONS

VCB=30V

VCB=40V

VEB=10V

IC=1.0μA

IC=1.0mA

IE=10μA

IC=1.0A, IB=2.0mA

VCE=5.0V, IC=1.0A

VCE=5.0V, IC=200mA

VCE=5.0V, IC=1.0A

VCE=5.0V, IC=200mA, f=100MHz

VCB=10V, IE=0, f=1.0MHz

VEBO

TJ, Tstg



2N6724

MIN

MAX

100

25K

100

1.5

2.0

40K

2N6724

2.0

0.5

2.0

2N6725

UNITS

°C

°C/W

-65 to +150

62.5

2N6725

MIN

MAX

25K

100

1.5

2.0

40K

UNITS

MHz

R1 (31-July 2013)

2N6724LEADFREE Related Products

	2N6724LEADFREE	2N6725LEADFREE
Description	Small Signal Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, TO-237, 3 PIN	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, TO-237, 3 PIN
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Parts packaging code	TO-237AA	TO-237AA
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Contacts	3	3
Reach Compliance Code	compli	compli
ECCN code	EAR99	EAR99
Maximum collector current (IC)	2 A	2 A
Collector-emitter maximum voltage	40 V	50 V
Configuration	DARLINGTON	DARLINGTON
Minimum DC current gain (hFE)	4000	4000
JEDEC-95 code	TO-237AA	TO-237AA
JESD-30 code	O-PBCY-T3	O-PBCY-T3
JESD-609 code	e3	e3
Number of components	1	1
Number of terminals	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	MATTE TIN (315)	MATTE TIN (315)
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	10	10
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	1 MHz	1 MHz
Base Number Matches	1	1

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