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MPSW63

Description
TRANSISTOR,BJT,DARLINGTON,PNP,30V V(BR)CEO,500MA I(C),TO-226AE
CategoryDiscrete semiconductor    The transistor   
File Size164KB,3 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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TRANSISTOR,BJT,DARLINGTON,PNP,30V V(BR)CEO,500MA I(C),TO-226AE

MPSW63 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNXP
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.5 A
ConfigurationDARLINGTON
Minimum DC current gain (hFE)10000
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)1 W
surface mountNO
Nominal transition frequency (fT)125 MHz

MPSW63 Related Products

MPSW63 MPSW64
Description TRANSISTOR,BJT,DARLINGTON,PNP,30V V(BR)CEO,500MA I(C),TO-226AE TRANSISTOR,BJT,DARLINGTON,PNP,30V V(BR)CEO,500MA I(C),TO-226AE
Is it Rohs certified? incompatible incompatible
Maker NXP NXP
Reach Compliance Code unknown unknown
Maximum collector current (IC) 0.5 A 0.5 A
Configuration DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 10000 20000
Maximum operating temperature 150 °C 150 °C
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 1 W 1 W
surface mount NO NO
Nominal transition frequency (fT) 125 MHz 125 MHz
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