Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3230
DESCRIPTION
·With
TO-220 package
·Complement
to type 2SA1276
·Good
linearity of h
FE
APPLICATIONS
·General
purpose applications
·Cordless
telephone tx final amplifier
application for 1.7MHz system
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
30
30
5
3
-3
10
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CE(sat)
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Collector output capacitance
Transition frequency
CONDITIONS
I
C
=10mA ;I
B
=0
I
E
=1mA ;I
C
=0
I
C
=2A ;I
B
=0.2 A
I
C
=0.5A ; V
CE
=2V
V
CB
=20V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.5A ; V
CE
=2V
I
C
=2.5A ; V
CE
=2V
I
E
=0; V
CB
=10V,f=1MHz
I
C
=0.5A ; V
CE
=2V
70
25
MIN
30
5
2SC3230
TYP.
MAX
UNIT
V
V
0.3
0.75
0.8
1.0
1.0
1.0
240
V
V
μA
μA
35
100
pF
MHz
h
FE-1
Classifications
O
70-140
Y
120-240
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3230
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
Analog electronics
京公网安备 11010802033920号
EEWORLD
