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BLP8G21S-160PV_15

Description
Power LDMOS transistor
File Size157KB,11 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet View All

BLP8G21S-160PV_15 Overview

Power LDMOS transistor

BLP8G21S-160PV
Power LDMOS transistor
Rev. 3 — 1 July 2014
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to
2025 MHz.
Table 1.
Typical performance
Typical RF performance per section at T
case
= 25
C in a common source class-AB production test
circuit.
Test signal
2-carrier W-CDMA
[1]
f
(MHz)
1880 to 1920
I
Dq
(mA)
600
V
DS
(V)
28
P
L(AV)
(W)
20
G
p
(dB)
17.5
D
(%)
31
ACPR
(dBc)
30
[1]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing = 5 MHz.
1.2 Features and benefits
Designed for broadband operation (1880 MHz to 2025 MHz)
Decoupling leads to enable improved video bandwidth
Excellent ruggedness
High efficiency
Excellent thermal stability
Internally matched for ease of use
High power gain
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base station and multi-carrier applications in the 1880 MHz to
2025 MHz frequency range
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