INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC4368
DESCRIPTION
·Collector-Emitter
Breakdown Voltage
: V
CEO
= 150V(Min)
·Complement
to Type 2SA1657
APPLICATIONS
·Designed
for TV, monitor vertical output applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current-Continuous
w
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w
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VALUE
UNIT
150
V
150
V
5.0
V
1.5
A
0.5
A
20
W
2
I
B
B
Base Current-Continuous
Collector Power Dissipation
@T
C
= 25℃
P
C
Collector Power Dissipation
@T
a
= 25℃
T
J
Junction Temperature
150
℃
T
stg
Storage Temperature
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC4368
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 10mA; I
B
= 0
150
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 500mA; I
B
= 50mA
1.5
V
I
CBO
Collector Cutoff Current
V
CB
= 120V; I
E
= 0
10
μA
I
EBO
Emitter Cutoff Current
V
EB
= 5V; I
C
= 0
10
μA
h
FE
DC Current Gain
I
C
= 500mA; V
CE
= 10V
C
OB
Collector Output Capacitance
f
T
Current-Gain—Bandwidth Product
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I
C
= 500m A; V
CE
= 10V
I
E
= 0; V
CB
= 10V; f= 1.0MHz
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i
40
140
35
pF
4
MHz
isc Website：www.iscsemi.cn
2
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