TZMC...
Vishay
Semiconductors
Silicon Epitaxial Planar Z–Diodes
Features
D
D
D
D
D
Very sharp reverse characteristic
Low reverse current level
Available with tighter tolerances
Very high stability
Low noise
Applications
Voltage stabilization
94 9371
Order Instruction
Type
TZMC2V4
Ordering Code
TZMC2V4–GS08
TZMC2V4–GS18
Remarks
Tape and Reel (2.500 pcs)
Tape and Reel (10.000 pcs)
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
R
thJA
300K/W
x
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
–65...+175
Unit
mW
mA
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
on PC board 50 mmx50 mmx1.6 mm
Symbol
R
thJA
Value
500
Unit
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
Document Number 85611
Rev. 4, 12-Mar-01
www.vishay.com
1 (6)
TZMC...
Vishay
Semiconductors
Type
TZMC...
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
1)
V
Znom
V
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
I
ZT
for V
ZT
and r
zjT
V
1)
2.28 to 2.56
< 85
2.5 to 2.9
< 85
2.8 to 3.2
< 90
3.1 to 3.5
< 90
3.4 to 3.8
< 90
3.7 to 4.1
< 90
4.0 to 4.6
< 90
4.4 to 5.0
< 80
4.8 to 5.4
< 60
5.2 to 6.0
< 40
5.8 to 6.6
< 10
6.4 to 7.2
<8
7.0 to 7.9
<7
7.7 to 8.7
<7
8.5 to 9.6
< 10
9.4 to 10.6
< 15
10.4 to 11.6
< 20
11.4 to 12.7
< 20
12.4 to 14.1
< 26
13.8 to 15.6
< 30
15.3 to 17.1
< 40
16.8 to 19.1
< 50
18.8 to 21.2
< 55
20.8 to 23.3
< 55
22.8 to 25.6
< 80
25.1 to 28.9
< 80
28 to 32
< 80
31 to 35
< 80
34 to 38
< 80
37 to 41
< 90
40 to 46
< 90
44 to 50
< 110
48 to 54
< 125
52 to 60
< 135
58 to 66
< 150
64 to 72
< 200
70 to 79
< 250
W
r
zjk
at I
ZK
mA
< 600
1
< 600
1
< 600
1
< 600
1
< 600
1
< 600
1
< 600
1
< 600
1
< 550
1
< 450
1
< 200
1
< 150
1
< 50
1
< 50
1
< 50
1
< 70
1
< 70
1
< 90
1
< 110
1
< 110
1
< 170
1
< 170
1
< 220
1
< 220
1
< 220
1
< 220
1
< 220
1
< 220
1
< 220
1
< 500 0.5
< 600 0.5
< 700 0.5
< 700 0.5
< 1000 0.5
< 1000 0.5
< 1000 0.5
< 1500 0.5
W
I
R
and I
R
at V
R
A
A
2)
V
< 50
< 100
1
< 10
< 50
1
<4
< 40
1
<2
< 40
1
<2
< 40
1
<2
< 40
1
<1
< 20
1
< 0.5
< 10
1
< 0.1
<2
1
< 0.1
<2
1
< 0.1
<2
2
< 0.1
<2
3
< 0.1
<2
5
< 0.1
<2
6.2
< 0.1
<2
6.8
< 0.1
<2
7.5
< 0.1
<2
8.2
< 0.1
<2
9.1
< 0.1
<2
10
< 0.1
<2
11
< 0.1
<2
12
< 0.1
<2
13
< 0.1
<2
15
< 0.1
<2
16
< 0.1
<2
18
< 0.1
<2
20
< 0.1
<2
22
< 0.1
<2
24
< 0.1
<2
27
< 0.1
<5
30
< 0.1
<5
33
< 0.1
<5
36
< 0.1
< 10
39
< 0.1
< 10
43
< 0.1
< 10
47
< 0.1
< 10
51
< 0.1
< 10
56
m
m
TK
VZ
%/K
–0.09 to –0.06
–0.09 to –0.06
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.06 to –0.03
–0.05 to +0.02
–0.02 to +0.02
–0.05 to +0.05
0.03 to 0.06
0.03 to 0.07
0.03 to 0.07
0.03 to 0.08
0.03 to 0.09
0.03 to 0.1
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.04 to 0.12
0.04 to 0,12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
Tighter tolerances available on request:
TZMA...
±
1% of V
Znom
TZMB...
±
2% of V
Znom
TZMF...
±
3% of V
Znom
2)
at T = 150
°
C
j
www.vishay.com
2 (6)
Document Number 85611
Rev. 4, 12-Mar-01
TZMC...
Vishay
Semiconductors
Characteristics
(T
j
= 25
_
C unless otherwise specified)
TK
VZ
– Temperature Coefficient of V
Z
( 10
–4
/K )
600
P
tot
– Total Power Dissipation ( mW )
500
400
300
200
100
0
0
95 9602
15
10
5
I
Z
=5mA
0
–5
0
10
20
30
40
50
V
Z
– Z-Voltage ( V )
40
80
120
160
200
T
amb
– Ambient Temperature (
°C
)
95 9600
Figure 1. Total Power Dissipation vs.
Ambient Temperature
1000
Figure 4. Temperature Coefficient of Vz vs. Z–Voltage
200
C
D
– Diode Capacitance ( pF )
– Voltage Change ( mV )
T
j
= 25°C
100
150
V
R
= 2V
100
T
j
= 25°C
I
Z
=5mA
10
D
V
Z
50
1
0
95 9598
0
5
10
15
20
25
95 9601
0
5
10
15
20
25
V
Z
– Z-Voltage ( V )
V
Z
– Z-Voltage ( V )
Figure 2. Typical Change of Working Voltage under
Operating Conditions at T
amb
=25
°
C
1.3
V
Ztn
– Relative Voltage Change
V
Ztn
=V
Zt
/V
Z
(25°C)
I
F
– Forward Current ( mA )
1.2
TK
VZ
=10
10
–4
/K
8
6
10
–4
/K
10
–4
/K
10
–4
/K
10
–4
/K
Figure 5. Diode Capacitance vs. Z–Voltage
100
10
T
j
= 25°C
1
1.1
4
2
1.0
0.9
0.8
–60
0
–2 10
–4
/K
–4
10
–4
/K
0.1
0.01
0.001
0
60
120
180
240
95 9605
0
0.2
0.4
0.6
0.8
1.0
95 9599
T
j
– Junction Temperature (
°C
)
V
F
– Forward Voltage ( V )
Figure 3. Typical Change of Working Voltage vs.
Junction Temperature
Figure 6. Forward Current vs. Forward Voltage
Document Number 85611
Rev. 4, 12-Mar-01
www.vishay.com
3 (6)
TZMC...
Vishay
Semiconductors
100
r
Z
– Differential Z-Resistance (
W
)
1000
I
Z
– Z-Current ( mA )
80
P
tot
=500mW
T
amb
=25°C
60
I
Z
=1mA
100
5mA
10 10mA
40
20
0
0
4
8
12
16
20
1
0
95 9606
T
j
= 25°C
5
10
15
20
25
95 9604
V
Z
– Z-Voltage ( V )
V
Z
– Z-Voltage ( V )
Figure 7. Z–Current vs. Z–Voltage
50
P
tot
=500mW
T
amb
=25°C
Figure 9. Differential Z–Resistance vs. Z–Voltage
I
Z
– Z-Current ( mA )
40
30
20
10
0
15
20
25
30
35
95 9607
V
Z
– Z-Voltage ( V )
Figure 8. Z–Current vs. Z–Voltage
Z
thp
– Thermal Resistance for Pulse Cond. (K/W)
1000
t
p
/T=0.5
100
t
p
/T=0.2
Single Pulse
10
t
p
/T=0.1
t
p
/T=0.05
1
10
–1
t
p
/T=0.02
i
ZM
=(–V
Z
+(V
Z2
+4r
zj
t
p
/T=0.01
D
T=T
jmax
–T
amb
R
thJA
=300K/W
D
T/Z
thp
)
1/2
)/(2r
zj
)
10
0
10
1
t
p
– Pulse Length ( ms )
10
2
95 9603
Figure 10. Thermal Response
www.vishay.com
4 (6)
Document Number 85611
Rev. 4, 12-Mar-01
TZMC...
Vishay
Semiconductors
Dimensions in mm
96 12070
Document Number 85611
Rev. 4, 12-Mar-01
www.vishay.com
5 (6)
京公网安备 11010802033920号
EEWORLD
