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TIP142T

Description
10A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size992KB,6 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
Environmental Compliance
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TIP142T Overview

10A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN

TIP142T Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerRochester Electronics
Parts packaging codeTO-220AB
package instructionTO-220, 3 PIN
Contacts3
Reach Compliance Codeunknown
Other featuresBUILT IN BIAS RESISTANCE RATIO IS 0.015
Maximum collector current (IC)10 A
Collector-emitter maximum voltage100 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)500
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Humidity sensitivity levelNOT APPLICABLE
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typeNPN
Certification statusCOMMERCIAL
surface mountNO
Terminal surfaceMATTE TIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT APPLICABLE
Transistor component materialsSILICON

TIP142T Preview

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TIP140T / TIP141T / TIP142T — NPN Epitaxial Silicon Darlington Transistor
July 2009
TIP140T / TIP141T / TIP142T
NPN Epitaxial Silicon Darlington Transistor
Features
Monolithic Construction With Built In Base-Emitter Shunt Resistors
High DC Current Gain : h
FE
= 1000 @ V
CE
= 4V, I
C
= 5A (Min.)
Industrial Use
Complement to TIP145T/146T/147T
Equivalent Circuit
C
B
1
TO-220
2.Collector
3.Emitter
R1
R2
E
1.Base
R1
8kΩ
R2
0.12kΩ
Absolute Maximum Ratings *
T
A
= 25°C unless otherwise noted
Symbol
V
CBO
Parameter
Collector-Base Voltage
: TIP140T
: TIP141T
: TIP142T
Value
60
80
100
60
80
100
5
10
15
0.5
80
150
-65 to +150
Units
V
V
V
V
V
V
V
A
A
A
W
°C
°C
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Emitter Voltage : TIP140T
: TIP141T
: TIP142T
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
© 2009 Fairchild Semiconductor Corporation
TIP140T / TIP141T / TIP142T Rev. B2
1
www.fairchildsemi.com
TIP140T / TIP141T / TIP142T — NPN Epitaxial Silicon Darlington Transistor
Electrical Characteristics
Symbol
V
CEO
(sus)
C
T
A
= 25° unless otherwise noted
Parameter
Collector-Emitter Sustaining Voltage
: TIP140T
: TIP141T
: TIP142T
Collector Cut-off Current
: TIP140T
: TIP141T
: TIP142T
Collector Cut-off Current
: TIP140T
: TIP141T
: TIP142T
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Delay Time
Rise Time
Storage Time
Fall Time
Test Condition
I
C
= 30mA, I
B
= 0
Min. Typ.
60
80
100
Max.
Units
V
V
V
I
CEO
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
CE
= 50V, I
B
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
V
BE
= 5V, I
C
= 0
V
CE
= 4V, I
C
= 5A
V
CE
=4V, I
C
= 10A
I
C
= 5A, I
B
= 10mA
I
C
= 10A, I
B
= 40mA
I
C
= 10A, I
B
= 40mA
V
CE
= 4V, I
C
= 10A
V
CC
= 30V, I
C
= 5A
I
B1
= 20mA
I
B2
= -20mA
R
L
= 6Ω
0.15
0.55
2.5
2.5
1000
500
2
2
2
1
1
1
2
mA
mA
mA
mA
mA
mA
mA
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
t
D
t
R
t
STG
t
F
2
3
3.5
3
V
V
V
V
µs
µs
µs
µs
© 2009 Fairchild Semiconductor Corporation
TIP140T / TIP141T / TIP142T Rev. B2
2
www.fairchildsemi.com
TIP140T / TIP141T / TIP142T — NPN Epitaxial Silicon Darlington Transistor
Typical Performance Characteristics
10
9
I
B
= 2000uA
I
B
= 1800uA
I
B
= 1600uA
I
B
= 1400uA
0uA
120
00uA
I
B
=
= 10
100k
I
C
[A], COLLECTOR CURRENT
I
B
I
B
= 800uA
I
B
= 600uA
I
B
= 400uA
V
CE
= 4V
10k
8
7
6
5
4
3
2
1
0
0
h
FE
, DC CURRENT GAIN
5
1k
I
B
= 200uA
100
1
2
3
4
10
0.1
1
10
100
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
1000
I
C
=500I
B
f=0.1MHz
V
BE
(sat)
1
V
CE
(sat)
C
ob
[pF], CAPACITANCE
10
100
100
0.1
0.01
0.1
1
10
1
10
100
1000
I
C
[A], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
100
100
I
C
[A], COLLECTOR CURRENT
10
P
C
[W], POWER DISSIPATION
80
60
D
C
40
1
TIP140T
TIP141T
TIP142T
0.1
1
10
100
1000
20
0
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
© 2009 Fairchild Semiconductor Corporation
TIP140T / TIP141T / TIP142T Rev. B2
3
www.fairchildsemi.com
TIP140T / TIP141T / TIP142T — NPN Epitaxial Silicon Darlington Transistor
Physical Dimensions
TO-220
© 2009 Fairchild Semiconductor Corporation
TIP140T / TIP141T / TIP142T Rev. B2
4
www.fairchildsemi.com
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