Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4369
DESCRIPTION
・With
TO-220F package
・Complement
to type 2SA1658
・Good
linearity of h
FE
APPLICATIONS
・For
general purpose applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
固电
导½
半
PARAMETER
ANG
CH
IN
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector dissipation
Junction temperature
Storage temperature
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
CT
NDU
O
VALUE
30
30
5
3
0.3
UNIT
V
V
V
A
A
W
℃
℃
T
C
=25℃
15
150
-55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC4369
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=10mA ; I
B
=0
30
V
V
CEsat
Collector-emitter saturation voltage
I
C
=2A ;I
B
=0.2A
0.8
V
V
BE
Base-emitter on voltage
I
C
=0.5A ; V
CE
=2V
1.0
V
I
CBO
Collector cut-off current
V
CB
=20V; I
E
=0
1.0
μA
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
1.0
μA
h
FE-1
DC current gain
I
C
=0.5A ; V
CE
=2V
70
240
h
FE-2
DC current gain
I
C
=2.5A ; V
CE
=2V
f
T
h
FE-1
Classifications
O
70-140
Y
固电
Transition frequency
导½
半
ANG
CH
IN
120-240
MIC
E SE
I
C
=0.5A ; V
CE
=2V
OR
CT
NDU
O
25
100
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4369
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
Fig.2 Outline dimensions
3
京公网安备 11010802033920号
EEWORLD
