UFCX790A datasheet, PDF - EEWORLD Datasheet

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UFCX790A: DescriptionSmall Signal Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon,; CategoryDiscrete semiconductor The transistor; File Size42KB，3 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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UFCX790A Overview

Small Signal Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon,

UFCX790A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
Reach Compliance Code	not_compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	150
JESD-30 code	R-PSSO-F3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	FLAT
Terminal location	SINGLE
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

UFCX790A Preview

SOT89 PNP SILICON POWER

(SWITCHING) TRANSISTOR

ISSUE 3 - OCTOBER 2005

FEATURES

FCX790A

C

*

2W POWER DISSIPATION

6A Peak Pulse Current

Excellent H

FE

Characteristics

Low Saturation Voltages

Partmarking Detail -

790

E

C

B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current **

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

VALUE

-50

-40

-5

-6

-2

1 †

2 ‡

-55 to +150

UNIT

V

A

W

°C

† recommended P

tot

calculated using FR4 measuring 15x15x0.6mm

‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4

substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by

other suppliers.

**Measured under pulsed conditions. Pulse width=300µs. Duty cycle

≤

2%

Spice parameter data is available upon request for these devices

Refer to the handling instructions when soldering surface mount components.

FCX790A

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C)

PARAMETER

Collector-Base Breakdown

Voltage

Collector-Emitter Breakdown

Voltage

Emitter-Base Breakdown

Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter Saturation

Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn-On Voltage

Static Forward Current

Transfer Ratio

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

MIN.

-50

-40

-5

-0.1

-250

-350

-450

-0.9

-0.8

300

250

200

150

100

225

24

35

600

800

TYP.

MAX.

UNIT

V

µA

mV

V

CONDITIONS.

I

C

=-100µA

I

C

=-10mA*

I

E

=-100µA

V

CB

=-30V

V

EB

=-4V

I

C

=-0.5A, I

B

=-5mA*

I

C

=-1A, I

B

=-10mA*

I

C

=-2A, I

B

=-50mA*

I

C

=-1A, I

B

=-10mA*

I

C

=-1A, V

CE

=-2V*

I

C

=-10mA, V

CE

=-2V

I

C

=-500mA, V

CE

=-2V*

I

C

=-1A, V

CE

=-2V*

I

C

=-2A, V

CE

=-2V*

MHz

pF

ns

I

C

=-50mA, V

CE

=-5V

f=50MHz

V

EB

=-0.5V, f=1MHz

V

CB

=-10V, f=1MHz

I

C

=-500mA, I

B1

=-50mA

I

B2

=-50mA, V

CC

=-10V

V

BE(sat)

V

BE(on)

h

FE

Transition Frequency

Input Capacitance

Output Capacitance

Switching Times

f

T

C

ibo

C

obo

t

on

t

off

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle

≤2%

FCX790A

TYPICAL CHARACTERISTICS

1.8

1.6

1.4

I

C

/I

B

=100

I

C

/I

B

=40

I

C

/I

B

=10

1.8

T

amb

=25°C

1.6

1.4

-55°C

+25°C

+100°C

+175°C

I

C

/I

B

=100

V

CE(sat)

- (Volts)

1.2

1.0

0.8

0.6

0.4

0.2

0

0.01

0.1

1

10

V

CE(sat)

- (Volts)

1.2

1.0

0.8

0.6

0.4

0.2

0

0.01

0.1

1

10

I

C

-

Collector Current (Amps)

I

C

-

Collector Current (Amps)

V

CE(sat)

v I

C

V

CE(sat)

v I

C

1.6

1.4

+100°C

+25°C

-55°C

V

CE

=2V

1.6

750

h

FE

- Normalised Gain

h

FE

- Typical Gain

1.4

-55°C

+25°C

+100°C

+175°C

I

C

/I

B

=100

1.2

1.0

0.8

0.6

0.4

0.2

0

0.01

0.1

1

10

250

500

V

BE(sat)

- (Volts)

1.2

1.0

0.8

0.6

0.4

0.2

0

0.01

0.1

1

10

I

C

-

Collector Current (Amps)

I

C

-

Collector Current (Amps)

h

FE

v I

C

10

-55°C

+25°C

+100°C

V

BE(sat)

v I

C

Single Pulse Test at T

amb

=25°C

1.6

1.4

I

C

- Collector Current (Amps)

V

CE

=2V

V

BE

- (Volts)

1.2

1.0

0.8

0.6

0.4

0.2

0

0.01

0.1

1

10

1

D.C.

1s

100ms

10ms

1.0ms

0.1ms

0.1

0.01

0.1

1

10

100

I

C

-

Collector Current (Amps)

V

CE

-

Collector Voltage (Volts)

V

BE(on)

v I

C

Safe Operating Area

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UFCX790A Related Products

	UFCX790A	FCX790ATC
Description	Small Signal Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon,	Small Signal Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon,
Maker	Zetex Semiconductors	Zetex Semiconductors
Reach Compliance Code	not_compliant	unknown
ECCN code	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	2 A	2 A
Collector-emitter maximum voltage	40 V	40 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	150	150
JESD-30 code	R-PSSO-F3	R-PSSO-F3
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	PNP	PNP
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Matte Tin (Sn)	MATTE TIN
Terminal form	FLAT	FLAT
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	10	40
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz

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