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2N5741E3

Description
Power Bipolar Transistor, 20A I(C), 60V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size79KB,1 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

2N5741E3 Overview

Power Bipolar Transistor, 20A I(C), 60V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,

2N5741E3 Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)20 A
Collector-emitter maximum voltage60 V
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typePNP
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON
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