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2N5781LEADFREE

Description
Small Signal Bipolar Transistor, 3.5A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size489KB,2 Pages
ManufacturerCentral Semiconductor
Environmental Compliance
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2N5781LEADFREE Overview

Small Signal Bipolar Transistor, 3.5A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN

2N5781LEADFREE Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-39
package instructionCYLINDRICAL, O-MBCY-W3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)3.5 A
Collector-emitter maximum voltage65 V
ConfigurationSINGLE
Minimum DC current gain (hFE)4
JEDEC-95 codeTO-39
JESD-30 codeO-MBCY-W3
JESD-609 codee3
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN (315)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)8 MHz
Maximum off time (toff)2500 ns
Maximum opening time (tons)500 ns
Base Number Matches1
2N5781 PNP
2N5784 NPN
COMPLEMENTARY SILICON
POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5781 and
2N5784 types are Complementary Silicon Power
Transistors designed for general purpose switching and
amplifier applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS:
(TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Power Dissipation (TA=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCER
VCEO
VEBO
IC
IB
PD
PD
TJ, Tstg
Θ
JC
Θ
JA
80
80
65
5.0
3.5
1.0
10
1.0
-65 to +200
17.5
175
MAX
10
1.0
10
1.0
100
10
UNITS
V
V
V
V
A
A
W
W
°C
°C/W
°C/W
UNITS
μA
mA
μA
mA
μA
μA
V
V
V
V
ELECTRICAL CHARACTERISTICS:
(TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICEV
VCE=75V, VBE=1.5V
ICEV
VCE=75V, VBE=1.5V, TC=150°C
ICER
VCE=65V, RBE=100Ω
ICER
VCE=65V, RBE=100Ω, TC=150°C
ICEO
VCE=50V
IEBO
VEB=5.0V
BVCER
IC=10mA, RBE=100Ω
80
BVCEO
IC=10mA
65
VCE(SAT)
IC=1.0A, IB=100mA
VBE(ON)
VCE=2.0V, IC=1.0A
hFE
VCE=2.0V, IC=1.0A
20
VCE=2.0V, IC=3.2A
4.0
hFE
fT
VCE=2.0V, IC=100mA, f=4.0MHz (2N5781)
8.0
fT
VCE=2.0V, IC=100mA, f=200kHz (2N5784)
1.0
hfe
VCE=2.0V, IC=100mA, f=1.0kHz
25
ton
VCC=30V, IC=1.0A, IB1=IB2=100mA (2N5781)
ton
VCC=30V, IC=1.0A, IB1=IB2=100mA (2N5784)
toff
VCC=30V, IC=1.0A, IB1=IB2=100mA (2N5781)
toff
VCC=30V, IC=1.0A, IB1=IB2=100mA (2N5784)
0.5
1.5
150
60
4.0
0.5
5.0
2.5
15
MHz
MHz
μs
μs
μs
μs
R1 (25-January 2011)

2N5781LEADFREE Related Products

2N5781LEADFREE 2N5784LEADFREE
Description Small Signal Bipolar Transistor, 3.5A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN Small Signal Bipolar Transistor, 3.5A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Parts packaging code TO-39 TO-39
package instruction CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Contacts 3 3
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Maximum collector current (IC) 3.5 A 3.5 A
Collector-emitter maximum voltage 65 V 65 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 4 4
JEDEC-95 code TO-39 TO-39
JESD-30 code O-MBCY-W3 O-MBCY-W3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 3
Package body material METAL METAL
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type PNP NPN
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface MATTE TIN (315) Matte Tin (Sn)
Terminal form WIRE WIRE
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature 10 10
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 8 MHz 8 MHz
Maximum off time (toff) 2500 ns 15000 ns
Maximum opening time (tons) 500 ns 5000 ns
Base Number Matches 1 1
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