Transys
Electronics
L I M I T E D
TO-92MOD Plastic-Encapsulated Transistors
TO-92MOD
1. EMITTER
2SA1283
FEATURE
Power dissipation
P
CM
: 0.9
TRANSISTOR (PNP)
2. COLLECTOR
W (Tamb=25℃)
3. BASE
Collector current
A
I
CM
: -1
Collector-base voltage
V
V
(BR)CBO
: -60
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CEsat
unless otherwise specified)
Test
conditions
MIN
-60
-60
-6
-0.2
-0.2
55
300
-0.3
50
V
MHz
MAX
UNIT
V
V
V
µA
µA
Ic= -10µA , I
E
=0
I
C
=-2mA , I
B
=0
I
E
= -10µA, I
C
=0
V
CB
= -50 V, I
E
=0
V
EB
= -4 V, I
C
=0
V
CE
=-4 V, I
C
= -100mA
I
C
= -500 mA, I
B
=-25 mA
V
CE
=-2V, I
C
= -10mA
V
CE
=-10V, I
E
=0,f=1 MHz
f
T
C
ob
Output capacitance
25
pF
CLASSIFICATION OF h
FE
Rank
Range
C
55-110
D
90-180
E
150-300
Embedded System
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