BAR63V-02V
Vishay Semiconductors
RF PIN Diode - Single in SOD-523
Description
Characterized by a very low reverse Capacitance the
PIN Diode BAR63V-02V was designed for RF signal
tuning. As a function of the forward bias current the
forward resistance (rf) can be adjusted to less than
1
Ω
while the low reverse capacitance offers a high
isolation. Typical applications for this PIN Diode are
wireless, mobile and TV-systems.
1
1
2
2
16863
Features
• Low forward resistance
• Space saving SOD-523 package with
low series inductance
• Very small reverse capacitance
• Lead (Pb)-free component
• Component in accordance to
RoHS 2002/95/EC and WEEE 2002/96/EC
RF-signal tuning
Mobile, wireless and TV-Applications
e3
Mechanical Data
Case:
SOD-523 Plastic case
Weight:
approx. 1.6 mg
Cathode Band Color:
Laser marking
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Applications
For frequency up to 3 GHz
Parts Table
Part
BAR63V-02V
Ordering code
BAR63V-02V-GS18 or BAR63V-02V-GS08
C
Marking
Remarks
Tape and Reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Test condition
Symbol
V
R
I
F
T
j
T
stg
Value
50
100
150
- 55 to + 150
Unit
V
mA
°C
°C
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction soldering point
Test condition
Symbol
R
thJS
Value
100
Unit
K/W
Document Number 85642
Rev. 1.5, 29-Jun-05
www.vishay.com
1
BAR63V-02V
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage
Reverse current
Forward voltage
Diode capacitance
Forward resistance
Test condition
I
R
= 10
µA
V
R
= 35 V
I
F
= 100 mA
f = 1 MHz, V
R
= 0
f = 1 MHz, V
R
= 5 V
f = 100 MHz, I
F
= 1 mA
f = 100 MHz, I
F
= 5 mA
f = 100 MHz, I
F
= 10 mA
Charge carrier life time
I
F
= 10 mA, I
R
= 6 mA, i
R
= 3 mA
Symbol
V
R
I
R
V
F
C
D
C
D
r
f
r
f
r
f
t
rr
0.28
0.23
2.0
1.1
0.9
115
2.0
0.3
Min
50
10
1.2
Typ.
Max
Unit
V
nA
V
pF
pF
Ω
Ω
Ω
ns
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
6
r
f
- Forward Resistance (
W
)
5
4
3
2
1
0
0.1
f = 100 MHz
100.00
I
F
- Forward Current ( mA )
10.00
1.00
0.10
18341_1
1.0
10
I
F
- Forward Current ( mA )
100
0.01
0.5
18325
0.6
0.7
0.8
0.9
1.0
V
F
- Forward Voltage ( V )
Figure 1. Forward Resistance vs. Forward Current
Figure 3. Forward Current vs. Forward Voltage
0.30
C
D
- Diode Capacitance ( pF )
120
f = 1 MHz
V
R
- Reverse V oltage ( V )
0.25
0.20
0.15
0.10
0.05
0.00
0
4
8
12
16
20
24
28
100
80
60
40
20
0
0.01
0.1
1.0
10
100
1000
18333
V
R
- Reverse V oltage (V)
18329
I
R
- Reverse Current (
µA
)
Figure 2. Diode Capacitance vs. Reverse Voltage
Figure 4. Reverse Voltage vs. Reverse Current
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2
Document Number 85642
Rev. 1.5, 29-Jun-05
BAR63V-02V
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
4
Document Number 85642
Rev. 1.5, 29-Jun-05
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