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BAR65V-02V

Description
SILICON, PIN DIODE
Categorysemiconductor    Discrete semiconductor   
File Size40KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Compare View All

BAR65V-02V Overview

SILICON, PIN DIODE

VISHAY
BAR65V-02V
Vishay Semiconductors
RF PIN Diode
Mechanical Data
Case:
Plastic case (SOD 523)
Weight:
1.5 mg
Cathode Band Color:
Laser marking
Packaging Codes/Options:
GS08 / 3 k per 7" reel (8 mm tape), 3 k/Box
A
Description
With the very low forward resistance combined with a
low reverse capacitance the BAR65V-02V is ideal for
RF-signal switching. Depending on the forward cur-
rent (If) the forward resistance (rf) can be reduced to
only a few hundred mΩ. Driven In the reverse mode
the "switch is off" , the isolation capacitance is less
than 1pF. Typical applications for this PIN Diode are
wireless, mobile and TV-systems.
C
16863
Applications
• For frequency up to 3 GHz
• RF-signal switching
• Mobile, wireless and TV-Applications
Features
• Space saving SOD523 package with low series
inductance
• Very low forward resistance
• Small reverse capacitance
Parts Table
Part
BAR65V-02V
Ordering code
BAR65V-02V-GS08
E
Marking
Remarks
Tape and Reel
Package
SOD523
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Test condition
Sub type
Symbol
V
R
I
F
T
j
T
stg
Value
30
100
150
- 55 to +
150
Unit
V
mA
°C
°C
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction soldering point
Test condition
Symbol
R
thJS
Value
100
Unit
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage
Reverse current
Forward voltage
V
R
= 20 V
I
F
= 100 mA
Test condition
I
R
= 10 µA
Sub type
Symbol
V
R
I
R
V
F
Min
30
20
1.1
Typ.
Max
Unit
V
nA
V
Document Number 85644
Rev. 1, 23-Oct-02
www.vishay.com
1

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BAR65V-02V BAR65V-02V-GS08
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