CMLTA44TR datasheet, PDF - EEWORLD Datasheet

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CMLTA44TR: DescriptionSmall Signal Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, PICOMINI-6; CategoryDiscrete semiconductor The transistor; File Size506KB，2 Pages; ManufacturerCentral Semiconductor

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CMLTA44TR Overview

Small Signal Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, PICOMINI-6

CMLTA44TR Parametric

Parameter Name	Attribute value
Maker	Central Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-F6
Contacts	6
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.3 A
Collector-emitter maximum voltage	400 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JESD-30 code	R-PDSO-F6
JESD-609 code	e0
Number of components	1
Number of terminals	6
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.25 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	FLAT
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	20 MHz

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CMLTA44

SURFACE MOUNT

EXTREMELY HIGH VOLTAGE

NPN SILICON TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLTA44 type

is an NPN High Voltage transistor, epoxy molded in

a space saving PICOmini™ SOT-563 surface mount

package and designed for extremely high voltage

applications.

MARKING CODE: 44C

SOT-563 CASE

MAXIMUM RATINGS: (T

A=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

IC

PD

TJ,Tstg

Θ

JA

UNITS

V

mA

mW

°C

°C/W

450

400

6.0

300

250

-65 to +150

500

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICBO

VCB=400V

ICES

IEBO

BVCBO

BVCES

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

hFE

fT

Cob

Cib

VCE=400V

VEB=4.0V

IC=100µA

IC=1.0mA

IE=10µA

IC=1.0mA, IB=0.1mA

IC=10mA, IB=1.0mA

IC=50mA, IB=5.0mA

IC=10mA, IB=1.0mA

VCE=10V, IC=1.0mA

VCE=10V,

IC=10mA

IC=50mA

IC=100mA

40

50

45

20

MAX

100

500

100

UNITS

nA

V

450

400

6.0

0.40

0.50

0.75

200

V

VCE=10V, IC=10mA, f=10MHz

VCB=20V, IE=0, f=1.0MHz

VEB=0.5V, IC=0, f=1.0MHz

7.0

130

MHz

pF

R1 (20-January 2010)

CMLTA44TR Related Products

	CMLTA44TR	CMLTA44BKLEADFREE	CMLTA44BK	CMLTA44TRLEADFREE
Description	Small Signal Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, PICOMINI-6	Transistor	Small Signal Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, PICOMINI-6	Transistor
Reach Compliance Code	compliant	compliant	compliant	compliant
Maximum collector current (IC)	0.3 A	0.3 A	0.3 A	0.3 A
Configuration	SINGLE	Single	SINGLE	Single
Minimum DC current gain (hFE)	20	50	20	50
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.25 W	0.25 W	0.25 W	0.25 W
surface mount	YES	YES	YES	YES
Nominal transition frequency (fT)	20 MHz	20 MHz	20 MHz	20 MHz

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