Frontier Electronics Corp.
667 E. COCHRAN STREET, SIMI VALLEY, CA 93065
TEL: (805) 522-9998
FAX: (805) 522-9989
E-mail:
frontiersales@frontierusa.com
Web:
http: //www.frontierusa.com
SURFACE MOUNT SWITCHING DIODE
BAS16
A
FEATURES
FAST SWITCHING
SURFACE MOUNT PACKAGE IDEALLY SUITED
FOR AUTOMATIC INSERTION
HIGH CONDUCTANCE
E
DIM
3
1
2
B C
1
D
G
H
K
J
L
BAS16
100
75
53
300
150
M
3
A
B
C
D
E
G
H
J
K
L
M
Min
0.30
1.20
2.10
0.85
0.45
1.70
2.70
0.00
0.89
0.30
0.076
Max
0.51
1.60
3.00
1.05
1.00
2.10
3.10
0.13
1.30
0.61
0.25
MECHANICAL DATA
CASE: SOT-23, PLASTIC, DIMENSIONS IN MILLIMETERS
TERMINALS: SOLDERABLE PER MIL-STD-202, METHOD 208
POLARITY: SEE DIAGRAM
WEIGHT: 0.008 GRAMS
RATINGS
NON-REPETITIVE PEAK REVERSE VOLTAGE
PEAK REPETITIVE REVERSE VOLTAGE
WORKING PEAK REVERSE VOLTAGE
DC BLOCKING VOLTAGE
RMS REVERSE VOLTAGE
FORWARD CONTINUOUS CURRENT (NOTE 1)
RECTIFIED CURRENT（AVERAGE）,HALF WAVE
RECTIFICATION WITH RESIST LOAD
AT T
amb
＝25°C
AND
≧
50MHZ
（NOTE 1）
NON-REPETITIVE PEAK FORWARD SURGE CURRENT @ t=1.0 S
@ t=1.0
μ
s
POWER DISSIPATION（NOTE 1）
DERATE ABOVE 25℃
THERMAL RESISTANCE
JUNCTION TO AMBIENT AIR（NOTE 1）
JUNCTION TEMPERATURE
STORAGE TEMPERATURE RANGE
MARKING
T
J
T
S
I
FSM
P
D
R
θ
JA
SYMBOL
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
UNITS
V
V
V
mA
mA
1.0
2.0
350
2.8
357
- 55 TO + 150
- 55 TO + 150
A6
A
mW
mW/℃
°C / W
°C
°C
ELECTRICAL CHARACTERISTICS
@ T
A
=25℃
CHARACTERISTICS
UNLESS OTHERWISE SPECIFIED
SYMBOL
Min.
Max.
715
855
1.0
1.25
1.0
50
30
4.0
6.0
Unit
mV
mV
V
V
μ
A
pF
nS
Test Condition
I
F
=1.0 mA
I
F
=10 mA
I
F
=50 mA
I
F
=150 mA
V
R
=75V
V
R
=70V, T
J
=150℃
V
R
=25V, T
J
=150℃
V
R
=0, f=1.0MHZ
I
F
=10mA to I
RR
=1.0 mA
V
R
=6.0V , R
L
=100Ω
MAXIMUM FORWARD VOLTAGE
V
F
-
MAXIMUM PEAK REVERSE CURRENT
CAPACITANCE
REVERSE RECOVERY TIME
I
RM
-
-
-
C
J
T
RR
NOTE: 1. DIODE ON CERAMIC SUBSTRATE 10mm x 8 mm x 0.7mm
BAS16
Page: 1
RATING AND CHARACTERISTICS CURVES BAS16
FIG.1 - FORWARD CHARACTERISTICS
1000
I
F
, INSTANTANEOUS FORWARD CURRENT, (mA)
100
10
T
J
=100℃
1.0
T
J
=25℃
0.1
0.01
0
1
INSTANTANEOUS FORWARD VOLTAGE (V)
2
FIG.2- LEAKAGE CURRENT vs
JUNCTION TEMPERATURE
10,000
I
R
, LEAKAGE CURRENT (nA)
1000
100
10
V
R
=20V
1
0
100
JUNCTION TEMPERATURE (℃)
200
BAS16
Page: 2
Embedded System
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