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BAS16-V_GS08

Description
0.15 A, 75 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size154KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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BAS16-V_GS08 Overview

0.15 A, 75 V, SILICON, SIGNAL DIODE

BAS16-V
Vishay Semiconductors
Small Signal Fast Switching Diode
Features
• Silicon Epitaxial Planar Diode
• Ultra fast switching speed
e3
• Surface mount package ideally suited
for automatic insertion
• High conductance
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
3
1
2
16923
Mechanical Data
Case:
SOT23 Plastic case
Weight:
approx. 8.0 mg
Polarity:
cathode band
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
BAS16-V
Ordering code
BAS16-V-GS18 or BAS16-V_GS08 A6
Marking
Remarks
Tape and Reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Non repetitive peak reverse
voltage
Repetitive peak reverse voltage
= Working peak reverse voltage
= DC Blocking voltage
Peak forward surge current
Average forward current
t
p
= 1 s
t
p
=1 µs
half wave rectification with
resistive load and f
50 MHz, on
ceramic substrate
8 mm x10 mm x 0.7 mm
on ceramic substrate
8 mm x 10 mm x 0.7 mm
on ceramic substrate
8 mm x 10 mm x 0.7 mm
Test condition
Symbol
V
RM
V
RRM
= V
RWM
= V
R
Value
100
75
Unit
V
V
I
FSM
I
FSM
I
FAV
1
2
150
A
A
mA
Forward current
Power dissipation
I
F
P
tot
300
350
mA
mW
Document Number 85539
Rev. 1.5, 09-Mar-06
www.vishay.com
1

BAS16-V_GS08 Related Products

BAS16-V_GS08 BAS16-V
Description 0.15 A, 75 V, SILICON, SIGNAL DIODE 0.15 A, 75 V, SILICON, SIGNAL DIODE

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