BAS16D-V
Vishay Semiconductors
Small Signal Fast Switching Diode
Features
• Silicon Epitaxial Planar Diode
• Fast switching diode
e3
• Also available in case SOT-23 with des-
ignation BAS16
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
17431
Mechanical Data
Case:
SOD-123 Plastic case
Weight:
approx. 9.3 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
BAS16D-V
Ordering code
BAS16D-V-GS18 or BAS16D-V-GS08
A6
Marking
Remarks
Tape and Reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage
Peak reverse voltage
Forward current (continuous)
Non-repetitive peak forward
current
t = 1
µs
t = 1 ms
t=1s
Power dissipation
1)
Test condition
Symbol
V
R
V
RM
I
F
I
FSM
I
FSM
I
FSM
P
tot
Value
75
100
250
2.0
1.0
0.5
350
1)
Unit
V
V
mA
A
A
A
mW
Valid provided electrodes are kept at ambient temperature
Document Number 85723
Rev. 1.2, 06-Apr-05
www.vishay.com
1
BAS16D-V
Vishay Semiconductors
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Maximum junction temperature
Storage temperature
1)
Test condition
Symbol
T
j
T
S
Value
150
- 65 to 150
1)
Unit
°C
°C
Valid provided electrodes are kept at ambient temperature
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Test condition
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
Leakage current
V
R
= 25 V, T
J
= 150 °C
V
R
= 75 V
V
R
= 75 V, T
J
= 150 °C
Diode capacitance
Reverse recovery time
Thermal resistance junction to
ambient air
1)
Symbol
V
F
V
F
V
F
V
F
I
R
I
R
I
R
C
tot
t
rr
R
thJA
Min
Typ.
Max
715
855
1.00
1.25
30
1
50
2
6
375
1)
Unit
mV
mV
V
V
µA
µA
µA
pF
ns
°C/W
V
R
= 0; f = 1 MHz
I
F
= 10 mA to I
R
= 10 mA,
I
R
= 1 mA, R
L
= 100
Ω
Valid provided electrodes are kept at ambient temperature
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
18105
17438
Figure 1. Forward characteristics
Figure 2. Dynamic Forward Resistance vs. Forward Current
www.vishay.com
2
Document Number 85723
Rev. 1.2, 06-Apr-05
BAS16D-V
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85723
Rev. 1.2, 06-Apr-05
www.vishay.com
5
Embedded System
京公网安备 11010802033920号
EEWORLD
