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BAS16T

Description
0.075 A, 85 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    Small signal switching diode   
File Size209KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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BAS16T Overview

0.075 A, 85 V, SILICON, SIGNAL DIODE

BAS16T Parametric

Parameter NameAttribute value
Case StyleSOT-523
IF(mA)155
Maximum recurrent peak reverse voltage85
TRR(nS)4.0
Maximum instantaneous forward voltage1.25
@IF(uA)0.15
Maximum reverse current2.0
@VR75
classDiodes
MMBD4148T/BAS16T
Switching Diode
SOT-523
Features
Fast Switching Speed
For General Purpose Switching Applications
High Conductance
Marking MMBD4148T: KA2, BAS16T:A2
Dimensions in inches and (millimeters)
Maximum Ratings @T
A
=25℃
Parameter
Non-Repetitive Peak reverse voltage
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking
Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Peak forward surge current @=1.0μs
@=1.0s
Power Dissipation
Thermal Resistance Junction to Ambient
Junction temperature
Storage temperature
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
Pd
R
θJA
T
j
T
STG
Limits
100
Unit
V
75
V
53
300
150
2.0
1.0
200
625
150
-65~+150
V
mA
mA
A
mW
K/W
Electrical Ratings @T
A
=25℃
Parameter
Reverse Breakdown Voltage
Symbol
V
(BR) R
V
F1
Forward voltage
V
F2
V
F3
V
F4
Reverse current
Capacitance between terminals
Reverse Recovery Time
I
R1
I
R2
C
T
t
rr
Min.
75
0.715
0.855
1.0
1.25
1
25
2
4
Typ.
Max.
Unit
V
V
V
V
V
μA
nA
pF
ns
Conditions
I
R
=1μA
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=75V
V
R
=20V
V
R
=0V,f=1MHz
I
F
=I
R
=10mA
Irr=0.1XI
R
,R
L
=100Ω
http://www.luguang.cn
mail:lge@luguang.cn

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