BAS16V datasheet, PDF - EEWORLD Datasheet

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BAS16V: Description0.2 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size317KB，2 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/; Environmental Compliance

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BAS16V Overview

0.2 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE

BAS16V Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SECOS
package instruction	ROHS COMPLIANT, PLASTIC PACKAGE-6
Contacts	6
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	SEPARATE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PDSO-F6
Number of components	2
Number of terminals	6
Maximum operating temperature	150 °C
Maximum output current	0.2 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.15 W
Maximum repetitive peak reverse voltage	75 V
Maximum reverse recovery time	0.004 µs
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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BAS16V

0.3A , 100V

Elektronische Bauelemente

Plastic-Encapsulated Transistors

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Fast switching speed

For General Purpose Switching Applications

High Conductance

SOT-563

MARKING

KAM

PACKAGE INFORMATION

REF.

Package

SOT-563

MPQ

Leader Size

7 inch

Millimeter

Min.

Max.

1.50

1.70

1.50

1.70

0.525

0.60

1.10

1.30

0.05

REF.

Millimeter

Min.

Max.

0.09

0.16

0.45

0.55

0.17

0.27

0.10

0.30

ABSOLUTE MAXIMUM RATINGS

=25°C unless otherwise specified)

Parameter

Non-Repetitive Peak reverse voltage

Maximum Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

Maximum DC Blocking Voltage

RMS Reverse Voltage

Peak forward Continuous current

Maximum Average Forward Rectified Current

Peak Forward Surge Current 8.3 ms Single Half

t=1.0µs

Sine-Wave Super Imposed on Rated Load (JEDEC

t=1.0s

Method)

Power dissipation

Thermal Resistance Junction to Ambient

Operating Junction and storage temperature range

Symbol

RRM

RWM

R(RMS)

F(AV)

FSM

Value

100

300

200

2.0

Unit

1.0

θJA

STG

150

833

150,-65~150

K/W

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

21-Jul-2011 Rev. A

Page 1 of 2

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