BAS16WT1G, SBAS16WT1G
Silicon Switching Diode
Features
•
AEC−Q101 Qualified and PPAP Capable
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
3
CATHODE
1
ANODE
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Continuous Reverse Voltage
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse Width = 10
ms
Total Power Dissipation,
One Diode Loaded T
A
= 25°C
Derate above 25°C
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
Operating and Storage Junction
Temperature Range
Symbol
V
R
I
R
I
FM(surge)
Value
75
200
500
Unit
V
mA
mA
SC−70
CASE 419
STYLE 2
MARKING
DIAGRAM
A6 MG
G
1
P
D
200
1.6
mW
mW/°C
°C
T
J
, T
stg
−55
to
+150
A6
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(*Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
BAS16WT1G
Package
SC−70
(Pb−Free)
SC−70
(Pb−Free)
Shipping
†
3000 / Tape & Reel
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
One Diode Loaded
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
Symbol
R
qJA
Max
625
Unit
SBAS16WT1G
°C/W
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2011
October, 2011− Rev. 9
1
Publication Order Number:
BAS16WT1/D
BAS16WT1G, SBAS16WT1G
100
IF, FORWARD CURRENT (mA)
IR , REVERSE CURRENT (μA)
10
T
A
= 150°C
1.0
T
A
= 125°C
10
T
A
= 85°C
T
A
= 25°C
T
A
= - 40°C
T
A
= 85°C
0.1
T
A
= 55°C
0.01
T
A
= 25°C
1.0
0.1
0.2
0.4
0.6
0.8
1.0
V
F
, FORWARD VOLTAGE (VOLTS)
1.2
0.001
0
10
20
30
40
V
R
, REVERSE VOLTAGE (VOLTS)
50
Figure 4. Forward Voltage
Figure 5. Leakage Current
0.68
CD, DIODE CAPACITANCE (pF)
0.64
0.60
0.56
0.52
0
2
4
6
8
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
http://onsemi.com
4
BAS16WT1G, SBAS16WT1G
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
A1
A2
b
c
D
E
e
e1
L
H
E
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
e1
3
H
E
1
2
E
b
e
A
0.05 (0.002)
A1
A2
L
c
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
http://onsemi.com
5
BAS16WT1/D
京公网安备 11010802033920号
EEWORLD
