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BAS16XV2T1_12

Description
0.2 A, 100 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size115KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BAS16XV2T1_12 Overview

0.2 A, 100 V, SILICON, SIGNAL DIODE

BAS16XV2T1_12 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionHALOGEN FREE AND ROHS COMPLIANT, 塑料, CASE 502-01, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formFLAT
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Maximum power consumption limit0.2000 W
Diode typeSignal diode
Maximum reverse recovery time0.0060 us
Maximum repetitive peak reverse voltage100 V
Maximum average forward current0.2000 A
BAS16XV2T1,
BAS16XV2T5,
SBAS16XV2T1G
Switching Diode
Features
High−Speed Switching Applications
Lead Finish: 100% Matte Sn (Tin)
Qualified Reflow Temperature: 260°C
Extremely Small SOD−523 Package
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Continuous Forward Current
Peak Forward Surge Current
Repetitive Peak Forward Current
Non−Repetitive Peak Forward Current
(Square Wave, T
J
= 25°C prior to surge)
t = 1
ms
t = 1 ms
t=1s
Symbol
V
R
I
F
I
FM(surge)
I
FRM
I
FSM
4.0
1.0
0.5
Value
75
200
500
500
Unit
V
mA
mA
mA
A
http://onsemi.com
1
CATHODE
2
ANODE
2
1
SOD−523
CASE 502
PLASTIC
MARKING
DIAGRAM
A6 MG
G
1
2
A6 = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BAS16XV2T1
BAS16XV2T1G
BAS16XV2T5G
SBAS16XV2T1G
Package
SOD−523
SOD−523
(Pb−Free)
SOD−523
(Pb−Free)
SOD−523
(Pb−Free)
Shipping†
3000 / Tape & Reel
3000 / Tape & Reel
8000 / Tape & Reel
3000 /T ape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings
are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation, (Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
1. FR-5 Minimum Pad.
Symbol
P
D
Max
200
1.57
R
θJA
T
J
, T
stg
635
−55
to 150
Unit
mW
mW/°C
°C/W
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2011
October, 2011
Rev. 6
1
Publication Order Number:
BAS16XV2T1/D

BAS16XV2T1_12 Related Products

BAS16XV2T1_12 BAS16XV2T5
Description 0.2 A, 100 V, SILICON, SIGNAL DIODE 0.2 A, 100 V, SILICON, SIGNAL DIODE
Number of terminals 2 2
Number of components 1 1
Processing package description HALOGEN FREE AND ROHS COMPLIANT, 塑料, CASE 502-01, 2 PIN HALOGEN FREE AND ROHS COMPLIANT, 塑料, CASE 502-01, 2 PIN
Lead-free Yes Yes
EU RoHS regulations Yes Yes
China RoHS regulations Yes Yes
state ACTIVE ACTIVE
packaging shape Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form FLAT FLAT
terminal coating MATTE Tin MATTE Tin
Terminal location pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy
structure single single
Diode component materials silicon silicon
Maximum power consumption limit 0.2000 W 0.2000 W
Diode type Signal diode Signal diode
Maximum reverse recovery time 0.0060 us 0.0060 us
Maximum repetitive peak reverse voltage 100 V 100 V
Maximum average forward current 0.2000 A 0.2000 A

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